Hsin-Kai Fang

According to our database, Hsin-Kai Fang authored at least 1 paper in 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2018

SiO₂ tunneling and Si₃N₄/HfO₂ trapping layers formed with low temperature processes on gate-all-around junctionless charge-trapping flash memory devices.

Hsin-Kai Fang, Kuei-Shu Chang-Liao, Chia-Hsin Cheng, Po-Yao Lin, Wen-Hsien Huang, Chang-Hong Shen, Jia-Min Shieh

Microelectron. Reliab., 2018