Hsien-Chin Chiu
Orcid: 0000-0003-1068-5798
According to our database1,
Hsien-Chin Chiu
authored at least 30 papers
between 2006 and 2020.
Collaborative distances:
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Bibliography
2020
IEEE Trans. Ind. Electron., 2020
2018
AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers.
Microelectron. Reliab., 2018
2017
Microelectron. Reliab., 2017
A high output power and low phase noise GaN HEMT VCO with array of switchable inductors.
Int. J. Circuit Theory Appl., 2017
2016
The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment.
Microelectron. Reliab., 2016
2015
N<sub>2</sub>O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO<sub>2</sub> High-k insulator.
Microelectron. Reliab., 2015
The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors.
Microelectron. Reliab., 2015
2014
Device characteristics of AlGaN/GaN MIS-HEMTs with high-k Hf<sub>x</sub>Zr<sub>1</sub><sub>-</sub><sub>x</sub>O<sub>2</sub> (x = 0.66, 0.47, 0.15) insulator layer.
Microelectron. Reliab., 2014
2013
Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design.
Microelectron. Reliab., 2013
Low frequency noise in field-plate multigate AlGaN/GaN single-pole-single-throw RF switches on silicon substrate.
Microelectron. Reliab., 2013
Microelectron. Reliab., 2013
Proceedings of the 16th IEEE International Symposium on Design and Diagnostics of Electronic Circuits & Systems, 2013
2012
Investigation on the thermal behavior of 0.15 μm gate-length In<sub>0.4</sub>Al<sub>0.6</sub>As/In<sub>0.4</sub>Ga<sub>0.6</sub>As MHEMT.
Microelectron. Reliab., 2012
Characterization and reliability of nMOSFETs on flexible substrates under mechanical strain.
Microelectron. Reliab., 2012
Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles.
Microelectron. Reliab., 2012
Microelectron. Reliab., 2012
Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer.
Microelectron. Reliab., 2012
High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs with zirconia film design.
Microelectron. Reliab., 2012
2011
High-k praseodymium oxide passivated AlGaN/GaN MOSFETs using P<sub>2</sub>S<sub>5</sub>/(NH<sub>4</sub>)<sub>2</sub>S<sub>X</sub> + UV interface treatment.
Microelectron. Reliab., 2011
Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs.
Microelectron. Reliab., 2011
High electrical performance liquid-phase HBr oxidation gate insulator of InAlAs/InGaAs metamorphic MOS-mHEMT.
Microelectron. Reliab., 2011
A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology.
Microelectron. Reliab., 2011
2010
Microelectron. Reliab., 2010
High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using palladium-gate technology.
Microelectron. Reliab., 2010
Electrical and reliability characteristics of GaAs MOSHEMTs utilizing high-k IIIB and IVB oxide layers.
Microelectron. Reliab., 2010
2009
A novel complementary Colpitts differential CMOS VCO with low phase noise performance.
Microelectron. J., 2009
2008
Design of training-based mobile receivers for multiuser time-hopping UWB communication systems.
Proceedings of the 5th International Conference on Mobile Technology, 2008
2007
IEICE Trans. Electron., 2007
2006
IEICE Trans. Electron., 2006