Hoyoung Shin

According to our database, Hoyoung Shin authored at least 1 paper in 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2020

A 28nm 10Mb Embedded Flash Memory for IoT Product with Ultra-Low Power Near-1V Supply Voltage and High Temperature for Grade 1 Operation.

Hoyoung Shin, Jisung Kim, Shinwuk Kang, Sungung Kwak

Proceedings of the IEEE Symposium on VLSI Circuits, 2020