HongLiang Lv

Orcid: 0000-0003-2726-4316

According to our database1, HongLiang Lv authored at least 10 papers between 2008 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Bibliography

2022
Design and Implementation of Charge Pump Phase-Locked Loop Frequency Source Based on GaAs pHEMT Process.
Sensors, 2022

2021
Characteristics of A Novel Quaternary Tunneling Field-Effect Transistor for Low Power Applicaitons.
Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021

2020
A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter.
IEEE Access, 2020

2019
The Study on Fabrication and Characterization of Al<sub>0.2</sub>In<sub>0.8</sub>Sb/InAs<sub>0.4</sub>Sb<sub>0.6</sub> Heterostructures by Molecular Beam Epitaxy.
IEEE Access, 2019

An Improved InP HEMT Small Signal Model with RC Network.
Proceedings of the 13th IEEE International Conference on ASIC, 2019

2018
Analysis and Design of a Broadband Frequency Divider Using Modified Active Loads in GaAs HBT.
J. Circuits Syst. Comput., 2018

A broadband high efficiency monolithic power amplifier with GaAs HBT.
IEICE Electron. Express, 2018

A high linearity, 8-GSa/s track-and-hold amplifier in GaAs HBT technology.
IEICE Electron. Express, 2018

2012
The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors.
Microelectron. Reliab., 2012

2008
Improved empirical DC I-V model for 4H-SiC MESFETs.
Sci. China Ser. F Inf. Sci., 2008


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