Honggyun Kim

According to our database, Honggyun Kim authored at least 1 paper in 2022.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2022

Effect of ALD Processes on Physical and Electrical Properties of HfO₂ Dielectrics for the Surface Passivation of a CMOS Image Sensor Application.

Honggyun Kim, Vijay D. Chavan, Jamal Aziz, Byoungsu Ko, Jae-Sung Lee, Junsuk Rho, Tukaram D. Dongale, Kyeong-Keun Choi, Deok-Kee Kim

IEEE Access, 2022