Hiroshi Nohira

According to our database, Hiroshi Nohira authored at least 4 papers between 2007 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2016

La₂O₃ gate dielectrics for AlGaN/GaN HEMT.

J. Chen, Takamasa Kawanago, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, D. Nohata, Hiroshi Nohira, Kuniyuki Kakushima

Microelectron. Reliab., 2016

2010

SrO capping effect for La₂O₃/Ce-silicate gate dielectrics.

Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2010

2008

Electrical characteristics of MOSFETs with La₂O₃/Y₂O₃ gate stack.

Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2008

2007

Angle-resolved photoelectron spectroscopy on gate insulators.

Takeo Hattori, Hiroshi Nohira, S. Shinagawa, M. Hori, M. Kase, T. Maruizumi

Microelectron. Reliab., 2007