Hiroshi Iwai
According to our database1,
Hiroshi Iwai
authored at least 63 papers
between 1987 and 2023.
Collaborative distances:
Collaborative distances:
Awards
IEEE Fellow
IEEE Fellow 1997, "For contributions to ultra-small geometry CMOS BiCMOS devices.".
Timeline
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On csauthors.net:
Bibliography
2023
Proceedings of the 15th IEEE International Conference on ASIC, 2023
2021
Proceedings of the 14th IEEE International Conference on ASIC, 2021
2019
Proceedings of the 13th IEEE International Conference on ASIC, 2019
2018
Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors.
Microelectron. Reliab., 2018
Improvement of SiO<sub>2</sub>/4H-SiC Interface properties by post-metallization annealing.
Microelectron. Reliab., 2018
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018
2017
Durability evaluation of hexagonal WO<sub>3</sub> electrode for lithium ion secondary batteries.
Microelectron. Reliab., 2017
Proceedings of the 12th IEEE International Conference on ASIC, 2017
2016
Resistive switching properties of a thin SiO<sub>2</sub> layer with CeO<sub>x</sub> buffer layer on n<sup>+</sup> and p<sup>+</sup> Si bottom electrodes.
Microelectron. Reliab., 2016
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current.
Microelectron. Reliab., 2016
Microelectron. Reliab., 2016
Proceedings of the 46th European Solid-State Device Research Conference, 2016
2015
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity.
Microelectron. Reliab., 2015
Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes.
Microelectron. Reliab., 2015
2014
A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability.
Microelectron. Reliab., 2014
On the current conduction mechanisms of CeO<sub>2</sub>/La<sub>2</sub>O<sub>3</sub> stacked gate dielectric.
Microelectron. Reliab., 2014
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement.
Microelectron. Reliab., 2014
Determination of energy and spatial distribution of oxide border traps in In<sub>0.53</sub>Ga<sub>0.47</sub>As MOS capacitors from capacitance-voltage characteristics measured at various temperatures.
Microelectron. Reliab., 2014
IEICE Trans. Commun., 2014
2013
Microelectron. Reliab., 2013
Improvement on sheet resistance uniformity of nickel silicide by optimization of silicidation conditions.
Microelectron. Reliab., 2013
Experiment on battery-less sensor activation via multi-point wireless energy transmission.
Proceedings of the 24th IEEE Annual International Symposium on Personal, 2013
Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs.
Proceedings of the European Solid-State Device Research Conference, 2013
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.
Proceedings of the European Solid-State Device Research Conference, 2013
2012
Improving the electrical characteristics of MOS transistors with CeO<sub>2</sub>/La<sub>2</sub>O<sub>3</sub> stacked gate dielectric.
Microelectron. Reliab., 2012
Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors.
Microelectron. Reliab., 2012
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown.
Microelectron. Reliab., 2012
Oxide and interface trap densities estimation in ultrathin W/La<sub>2</sub>O<sub>3</sub>/Si MOS capacitors.
Microelectron. Reliab., 2012
Resistive switching behavior of a CeO<sub>2</sub> based ReRAM cell incorporated with Si buffer layer.
Microelectron. Reliab., 2012
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
2011
Effects of La<sub>2</sub>O<sub>3</sub> incorporation in HfO<sub>2</sub> gated nMOSFETs on low-frequency noise.
Microelectron. Reliab., 2011
Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs.
Microelectron. Reliab., 2011
Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors.
Microelectron. Reliab., 2011
2010
Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness.
Microelectron. Reliab., 2010
Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La<sub>2</sub>O<sub>3</sub> gate dielectrics.
Microelectron. Reliab., 2010
Microelectron. Reliab., 2010
Performance Analysis of MIMO Schemes in Residential Home Environment via Wideband MIMO Propagation Measurement.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2010
IEICE Trans. Electron., 2010
Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs.
IEICE Trans. Electron., 2010
Performance Evaluation of Spatial Correlation Characteristics for Handset Antennas Using Spatial Fading Emulator Based on Clarke's Model.
IEICE Trans. Commun., 2010
2009
Microelectron. Reliab., 2009
2008
Electrical characteristics of MOSFETs with La<sub>2</sub>O<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub> gate stack.
Microelectron. Reliab., 2008
2007
IEICE Trans. Commun., 2007
Carrier separation and Vth measurements of W-La<sub>2</sub>O<sub>3</sub> gated MOSFET structures after electrical stress.
IEICE Electron. Express, 2007
Proceedings of the IEEE 18th International Symposium on Personal, 2007
2006
Effective mobility and interface-state density of La<sub>2</sub>O<sub>3</sub> nMISFETs after post deposition annealing.
IEICE Electron. Express, 2006
Performance Analysis of MIMO-OFDM Systems using Indoor Wideband MIMO Channel Measurement Data.
Proceedings of the 63rd IEEE Vehicular Technology Conference, 2006
2005
Degradation of high-K LA<sub>2</sub>O<sub>3</sub> gate dielectrics using progressive electrical stress.
Microelectron. Reliab., 2005
Electrical properties of vacuum annealed La<sub>2</sub>O<sub>3</sub> thin films grown by E-beam evaporation.
Microelectron. J., 2005
Measurements on Area Coverage of 5GHZ Band MIMO-OFDM System in Residential Home Environment.
Proceedings of the IEEE 16th International Symposium on Personal, 2005
Foundries, EDA vendors, and designers: who shoulders the blame when a design doesn't work in the nano-scale and wireless era?
Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005
2004
Proceedings of the 17th International Conference on VLSI Design (VLSI Design 2004), 2004
2002
Microelectron. Reliab., 2002
1999
1998
Proceedings of the IEEE 1998 Custom Integrated Circuits Conference, 1998
1989
Proceedings of the 1989 IEEE International Conference on Computer-Aided Design, 1989
1987
Analysis of Velocity Saturation and Other Effects on Short-Channel MOS Transistor Capacitances.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1987