Hiroki Fujisawa
According to our database1,
Hiroki Fujisawa
authored at least 8 papers
between 1997 and 2007.
Collaborative distances:
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Bibliography
2007
An 8.1-ns Column-Access 1.6-Gb/s/pin DDR3 SDRAM With an 8: 4 Multiplexed Data-Transfer Scheme.
IEEE J. Solid State Circuits, 2007
2006
An 8.4ns Column-Access 1.3Gb/s/pin DDR3 SDRAM with an 8: 4 Multiplexed Data-Transfer Scheme.
Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006
2005
1.8-V 800-Mb/s/pin DDR2 and 2.5-V 400-Mb/s/pin DDR1 compatibly designed 1Gb SDRAM with dual-clock input-latch scheme and hybrid multi-oxide output buffer.
IEEE J. Solid State Circuits, 2005
2003
A 1-Gb/s/pin 512-Mb DDRII SDRAM using a digital DLL and a slew-rate-controlled output buffer.
IEEE J. Solid State Circuits, 2003
2002
IEEE J. Solid State Circuits, 2002
2001
A multigigabit DRAM technology with 6F<sup>2</sup> open-bitline cell, distributed overdriven sensing, and stacked-flash fuse.
IEEE J. Solid State Circuits, 2001
A dual-phase-controlled dynamic latched amplifier for high-speed and low-power DRAMs.
IEEE J. Solid State Circuits, 2001
1997
The charge-share modified (CSM) precharge-level architecture for high-speed and low-power ferroelectric memory.
IEEE J. Solid State Circuits, 1997