Hiroaki Arimura

According to our database1, Hiroaki Arimura authored at least 11 papers between 2013 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

2014
2016
2018
2020
2022
2024
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1
2
3
4
3
2
3
1
1
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Legend:

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In proceedings 
Article 
PhD thesis 
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Other 

Links

On csauthors.net:

Bibliography

2024
DRAM-Peri FinFET - A Thermally-Stable High-Performance Advanced CMOS RMG Platform with Mo-Based pWFM for sub-10nm DRAM.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Vt Fine-Tuning in Multi-Vt Gate-All-Around Nanosheet nFETs Using Rare-Earth Oxide-Based Dipole-First Gate Stack Compatible with CFET Integration.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with VTH Tunability for Future Memories.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021
Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper.
Proceedings of the International Conference on IC Design and Technology, 2021

2016

2013
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.
Proceedings of the European Solid-State Device Research Conference, 2013


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