Hidemasa Takahashi

According to our database, Hidemasa Takahashi authored at least 3 papers between 1999 and 2008.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2008

1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p⁺-GaAs Gate Hetero-Junction FET.

Fumio Harima, Yasunori Bito, Hidemasa Takahashi, Naotaka Iwata

IEICE Trans. Electron., 2008

2007

High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station.

Kouji Ishikura, Isao Takenaka, Hidemasa Takahashi, Kouichi Hasegawa, Kazunori Asano, Naotaka Iwata

IEICE Trans. Electron., 2007

1999

L/S-band 140-W push-pull power AlGaAs/GaAs HFET's for digital cellular base stations.

Isao Takenaka, Kouji Ishikura, Hidemasa Takahashi, Kazunori Asano, Junko Morikawa, K. Satou, K. Kishi, Kouichi Hasegawa, K. Tokunaga, Fumiaki Emori, Masaaki Kuzuhara

IEEE J. Solid State Circuits, 1999