Hideaki Matsuzaki
Orcid: 0000-0002-7027-8919
According to our database1,
Hideaki Matsuzaki
authored at least 23 papers
between 1999 and 2022.
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Bibliography
2022
Nanosecond-scale Hitless λ-switching of SOA-integrated Electro-optically Tunable RTF Laser with +/-2.5-GHz Dynamic Frequency Accuracy.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2022
2020
IEEE J. Solid State Circuits, 2020
High Output Power and Compact LAN-WDM EADFB Laser TOSA for 4 × 100-Gbit/s/λ 40-km Fiber-Amplifier-Less Transmission.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2020
Burst-Tolerant λ-Switching of Electro-Optically Tunable Reflection-type Transversal Filter Laser with Single Active Region.
Proceedings of the European Conference on Optical Communications, 2020
Inverted p-down pin photodiode exceeding 70-GHz bandwidth featuring low operating bias voltage of 2 V.
Proceedings of the European Conference on Optical Communications, 2020
Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020
230-305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020
2019
InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz <i>f</i><sub>max</sub> and 5.4-V breakdown voltage.
IEICE Electron. Express, 2019
300-GHz 120-Gb/s Wireless Transceiver with High-Output-Power and High-Gain Power Amplifier Based on 80-nm InP-HEMT Technology.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019
2018
Dispersion tolerance of 100-Gbit/s PAM4 optical link utilizing high-speed avalanche photodiode receiver.
IEICE Electron. Express, 2018
106-Gbit/s PAM4 40-km Transmission Using an Avalanche Photodiode With 42-GHz Bandwidth.
Proceedings of the Optical Fiber Communications Conference and Exposition, 2018
2017
Advantages of SOA Assisted Extended Reach EADFB Laser (AXEL) for Operation at Low Power and with Extended Transmission Reach.
IEICE Trans. Electron., 2017
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2017
2016
Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz <i>f</i><sub>max</sub> and 5-V Breakdown Voltage.
IEICE Trans. Electron., 2016
56-Gbit/s 40-km optical-amplifier-less transmission with NRZ format using high-speed avalanche photodiodes.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2016
2015
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2015
2014
Proceedings of the European Conference on Optical Communication, 2014
2006
IEICE Trans. Electron., 2006
W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs.
IEICE Trans. Electron., 2006
2004
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors.
IEICE Electron. Express, 2004
Low-power and High-speed SCFL-inverter Using Pseudomorphic InGaAs Channel High Electron Mobility Transistors.
IEICE Electron. Express, 2004
1999
Proceedings of the 9th Great Lakes Symposium on VLSI (GLS-VLSI '99), 1999
Proceedings of the 9th Great Lakes Symposium on VLSI (GLS-VLSI '99), 1999