Hervé Blanck

According to our database, Hervé Blanck authored at least 17 papers between 2001 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.

Zhan Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz

Proceedings of the IEEE International Reliability Physics Symposium, 2022

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.

Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2018

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs.

Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, Marc Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, Daniel Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2018

2017

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices.

Andreas Graff, Michél Simon-Najasek, Frank Altmann, Ján Kuzmík, Dagmar Gregusová, S. Hascik, Helmut Jung, T. Baur, Jan Grünenpütt, Hervé Blanck

Microelectron. Reliab., 2017

2016

Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures.

Mikael Broas, Andreas Graff, Michél Simon-Najasek, David Poppitz, Frank Altmann, Helmut Jung, Hervé Blanck

Microelectron. Reliab., 2016

2015

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence.

Tommaso Brazzini, Michael A. Casbon, Huarui Sun, Michael J. Uren, Jonathan Lees, Paul J. Tasker, Helmut Jung, Hervé Blanck, Martin Kuball

Microelectron. Reliab., 2015

2014

Proton induced trapping effect on space compatible GaN HEMTs.

Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni

Microelectron. Reliab., 2014

Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications.

Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni

Microelectron. Reliab., 2014

2013

Qualification of 50 V GaN on SiC technology for RF power amplifiers.

P. J. van der Wel, T. Rödle, Benoit Lambert, Hervé Blanck, Maximilian Dammann

Microelectron. Reliab., 2013

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.

Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat

Microelectron. Reliab., 2013

2012

Reliability studies on GaN HEMTs with sputtered Iridium gate module.

Richard Lossy, Hervé Blanck, Joachim Würfl

Microelectron. Reliab., 2012

Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification.

Benoit Lambert, Jim Thorpe, Reza Behtash, Bernd Schauwecker, Franck Bourgeois, Helmut Jung, Joëlle Bataille, Patrick Mezenge, Cyril Gourdon, Catherine Ollivier, Didier Floriot, Hervé Blanck

Microelectron. Reliab., 2012

Improved thermal management for GaN power electronics: Silver diamond composite packages.

Mustapha Faqir, Tim Batten, T. Mrotzek, S. Knippscheer, M. Massiot, M. Buchta, Hervé Blanck, Stéphane Rochette, Olivier Vendier, Martin Kuball

Microelectron. Reliab., 2012

2010

Reliability of high voltage/high power L/S-band Hbt technology.

Benoit Lambert, G. Jonsson, J. Bataille, C. Ollivier, P. Mezenge, H. Derewonko, H. Thomas, D. Floriot, Hervé Blanck, C. Moreau

Microelectron. Reliab., 2010

2008

GaAs Industry in Europe - Technologies, Trends and New Developments.

Helmut Jung, Hervé Blanck, Wolfgang Bösch, Jim Mayock

IEICE Trans. Electron., 2008

2002

Exploring the limits of Arrhenius-based life testing with heterojunction bipolar transistor technology.

R. Petersen, Ward De Ceuninck, Jan D'Haen, Marc D'Olieslaeger, Luc De Schepper, Olivier Vendier, Hervé Blanck, Dominique Pons

Microelectron. Reliab., 2002

2001

Determination of the thermal resistance and current exponent of heterojunction bipolar transistors for reliability evaluation.

R. Petersen, Ward De Ceuninck, Luc De Schepper, Olivier Vendier, Hervé Blanck, Dominique Pons

Microelectron. Reliab., 2001