Heqiu Zhang

According to our database, Heqiu Zhang authored at least 2 papers between 2001 and 2002.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2002

The effect of transition region on the direct tunneling current and Fowler-Nordheim tunneling current oscillations in ultrathin MOS structures.

Lingfeng Mao, Heqiu Zhang, Changhua Tan, Mingzhen Xu

Microelectron. Reliab., 2002

2001

Effect of SiO₂/Si interface roughness on gate current.

Lingfeng Mao, Yao Yang, Jian-Lin Wei, Heqiu Zhang, Mingzhen Xu, Changhua Tan

Microelectron. Reliab., 2001