Henri Happy

According to our database, Henri Happy authored at least 12 papers between 1990 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Integrated twisted bilayer graphene photonic upconverter for D-Band wireless links.

Alberto Montanaro, Alex Boschi, Guillaume Ducournau, Vaidotas Miseikis, Stefano Soresi, Mario G. L. Frecassetti, Paola Galli, Henri Happy, Sergio Pezzini, Camilla Coletti, Marco Romagnoli, Vito Sorianello

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2024

2023

Straightforward bias- and frequency-dependent small-signal model extraction for single-layer graphene FETs.

Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Wei Wei, Emiliano Pallecchi, Henri Happy, David Jiménez

Microelectron. J., March, 2023

Devices and circuits for HF applications based on 2D materials.

Simon Skrzypczak, Di Zhou, Wei Wei, Dalal Fadil, Dominique Vignaud, Emiliano Pallecchi, Henri Happy

Proceedings of the 38th Conference on Design of Circuits and Integrated Systems, 2023

2021

Single-Pole-Double-Throw RF switches based on monolayer MoS2.

Myungsoo Kim, Emiliano Pallecchi, Henri Happy, Deji Akinwande

Proceedings of the Device Research Conference, 2021

2018

2D RF Electronics: from devices to circuits - challenges and applications.

D. Fadi, Wei Wei, Emiliano Pallecchi, M. Anderson, J. Stake, Marina Deng, Sébastien Fregonese, Thomas Zimmer, Henri Happy

Proceedings of the 76th Device Research Conference, 2018

2017

Capacitive microwave sensor for toxic vapor detection in polluted environments.

Prince Bahoumina, Hamida Hallil, Katrin Pieper, Jean-Luc Lachaud, Dominique Rebière, Corinne Dejous, Aymen Abdelghani, Kamel Frigui, Stephane Bila, Dominique Baillargeat, Qing Zhang, Philippe Coquet, E. Pichonat, Henri Happy

Proceedings of the 2017 IEEE SENSORS, Glasgow, United Kingdom, October 29, 2017

2016

Contact resistance Study of "edge-contacted" metal-graphene interfaces.

Vikram Passi, Amit Gahoi, Jasper Ruhkopf, Satender Kataria, F. Vaurette, Emiliano Pallecchi, Henri Happy, Max Christian Lemme

Proceedings of the 46th European Solid-State Device Research Conference, 2016

Physics-based electrical compact model for monolayer Graphene FETs.

Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee, Cristell Maneux, Thomas Zimmer, Wei Wei, Henri Happy

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Characterization and modeling of low-frequency noise in CVD-grown graphene FETs.

C. Mukherjee, Jorgue Daniel Aguirre Morales, Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, Wei Wei

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation.

C. Mukherjee, Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, David Mele

Proceedings of the 44th European Solid State Device Research Conference, 2014

2001

Hemt's capability for millimeter wave applications.

S. Bollaert, Yvon Cordier, M. Zaknoune, T. Parenty, Henri Happy, Alain Cappy

Ann. des Télécommunications, 2001

1990

Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach.

Jocelyn Alamkan, Henri Happy, Yvon Cordier, Alain Cappy

Eur. Trans. Telecommun., 1990