Heng You
Orcid: 0000-0002-9386-8030
According to our database1,
Heng You
authored at least 22 papers
between 2018 and 2024.
Collaborative distances:
Collaborative distances:
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Bibliography
2024
A 1-8b Reconfigurable Digital SRAM Compute-in-Memory Macro for Processing Neural Networks.
IEEE Trans. Circuits Syst. I Regul. Pap., April, 2024
A Dual-Wordline 6T SRAM Computing-In-Memory Macro Featuring Full Signed Multi-Bit Computation for Lightweight Networks.
IEEE Access, 2024
A 409mV, Sub-10nW Power-on Reset Circuit Using Adaptive Accuracy Adjustment for Low Voltage Applications.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2024
Proceedings of the Thirty-Eighth AAAI Conference on Artificial Intelligence, 2024
2023
Proceedings of the Advances in Knowledge Discovery and Data Mining, 2023
Proceedings of the 2023 International Conference on Autonomous Agents and Multiagent Systems, 2023
2022
IEICE Trans. Electron., November, 2022
IEEE Trans. Circuits Syst. II Express Briefs, 2022
A fully integrated GaAs HBT power amplifier with enhanced efficiency for 5-GHz WLAN applications.
IEICE Electron. Express, 2022
IEICE Electron. Express, 2022
Cross-domain adaptive transfer reinforcement learning based on state-action correspondence.
Proceedings of the Uncertainty in Artificial Intelligence, 2022
2021
Low-Power Retentive True Single-Phase-Clocked Flip-Flop With Redundant-Precharge-Free Operation.
IEEE Trans. Very Large Scale Integr. Syst., 2021
Area-energy efficient CORDICs using new elementary-angle-set and base-2 exponent expansions scheme.
IEICE Electron. Express, 2021
A 8.83nW, 0.14ppm/℃ crystal oscillator using duty-cycling automatic amplitude control.
IEICE Electron. Express, 2021
Proceedings of the IEEE International Symposium on Circuits and Systems, 2021
2020
IEEE Trans. Circuits Syst., 2020
IEICE Electron. Express, 2020
A 8bits, 6.2ps resolution two-step time-to-digital converter with set-reset-based arbiters and signal tracking mechanism.
IEICE Electron. Express, 2020
2019
IEICE Electron. Express, 2019
IEICE Electron. Express, 2019
2018
A robust, subthreshold 12T SRAM bitcell with BL leakage compensation and bit-interleaving capability.
IEICE Electron. Express, 2018