Hei Wong
Orcid: 0000-0002-8646-656X
According to our database1,
Hei Wong
authored at least 65 papers
between 2001 and 2023.
Collaborative distances:
Collaborative distances:
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Bibliography
2023
Proceedings of the IEEE International Conference on Signal Processing, 2023
2022
Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices.
Sci. China Inf. Sci., 2022
2020
Microelectron. J., 2020
2018
IEEE Trans. Circuits Syst. II Express Briefs, 2018
Microelectron. Reliab., 2018
Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress.
Microelectron. Reliab., 2018
Proceedings of the 28th International Conference on Field Programmable Logic and Applications, 2018
2017
IEEE Trans. Circuits Syst. I Regul. Pap., 2017
2016
The variation of the leakage current characteristics of W/Ta<sub>2</sub>O<sub>5</sub>/W MIM capacitors with the thickness of the bottom W electrode.
Microelectron. Reliab., 2016
Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices.
Microelectron. Reliab., 2016
Microelectron. Reliab., 2016
Effects of thermal annealing on the charge localization characteristics of HfO<sub>2</sub>/Au/HfO<sub>2</sub> stack.
Microelectron. Reliab., 2016
2015
A high-efficiency full-wave CMOS rectifying charge pump for RF energy harvesting applications.
Microelectron. J., 2015
Optimization of loss tangent and capacitor size of micro-vacuum dielectric capacitors.
Microelectron. J., 2015
Int. J. Circuit Theory Appl., 2015
Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015
2014
Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology.
Microelectron. Reliab., 2014
Microelectron. Reliab., 2014
On the current conduction mechanisms of CeO<sub>2</sub>/La<sub>2</sub>O<sub>3</sub> stacked gate dielectric.
Microelectron. Reliab., 2014
Temperature dependences of threshold voltage and drain-induced barrier lowering in 60 nm gate length MOS transistors.
Microelectron. Reliab., 2014
Microelectron. Reliab., 2014
2013
Thermal and voltage instabilities of hafnium oxide films prepared by sputtering technique.
Microelectron. Reliab., 2013
2012
Improving the electrical characteristics of MOS transistors with CeO<sub>2</sub>/La<sub>2</sub>O<sub>3</sub> stacked gate dielectric.
Microelectron. Reliab., 2012
Microelectron. Reliab., 2012
Microelectron. Reliab., 2012
Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors.
Microelectron. Reliab., 2012
Degradation behaviors of GaN light-emitting diodes under high-temperature and high-current stressing.
Microelectron. Reliab., 2012
Microelectron. Reliab., 2012
2011
Microelectron. Reliab., 2011
Proceedings of the 2011 IEEE 9th International Conference on ASIC, 2011
2010
Microelectron. Reliab., 2010
Analysis of ESD discharge current distribution and area optimization of VDMOS gate protection structure.
Microelectron. Reliab., 2010
Generating sub-1V reference voltages from a resistorless CMOS bandgap reference circuit by using a piecewise curvature temperature compensation technique.
Microelectron. Reliab., 2010
Modeling the charge transport mechanism in amorphous Al<sub>2</sub>O<sub>3</sub> with multiphonon trap ionization effect.
Microelectron. Reliab., 2010
J. Circuits Syst. Comput., 2010
2009
Effects of periphery encapsulation material on the characteristics of micro vacuum dielectric capacitor.
Microelectron. Reliab., 2009
Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors.
Microelectron. Reliab., 2009
Microelectron. Reliab., 2009
Microelectron. Reliab., 2009
Proceedings of the International Symposium on Circuits and Systems (ISCAS 2009), 2009
2008
Silicon oxynitride integrated waveguide for on-chip optical interconnects applications.
Microelectron. Reliab., 2008
Effects of aluminum incorporation on hafnium oxide film using plasma immersion ion implantation.
Microelectron. Reliab., 2008
Proceedings of the IEEE Asia Pacific Conference on Circuits and Systems, 2008
Proceedings of the IEEE Asia Pacific Conference on Circuits and Systems, 2008
Proceedings of the IEEE Asia Pacific Conference on Circuits and Systems, 2008
2007
Single band electronic conduction in hafnium oxide prepared by atomic layer deposition.
Microelectron. Reliab., 2007
Characterization and modeling of flicker noise in junction field-effect transistor with source and drain trench isolation.
Microelectron. Reliab., 2007
2006
Minimizing hydrogen content in silicon oxynitride by thermal oxidation of silicon-rich silicon nitride.
Microelectron. Reliab., 2006
Definition of curve fitting parameter to study tunneling and trapping of electrons in Si/ultra-thin SiO<sub>2</sub>/metal structures.
Microelectron. Reliab., 2006
2005
Microelectron. J., 2005
2004
2003
Microelectron. Reliab., 2003
Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing.
Microelectron. Reliab., 2003
Microelectron. Reliab., 2003
Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride.
Microelectron. Reliab., 2003
2002
Ultra-shallow n<sup>+</sup>p junction formed by PH<sub>3</sub> and AsH<sub>3</sub> plasma immersion ion implantation.
Microelectron. Reliab., 2002
Microelectron. Reliab., 2002
2001
Microelectron. Reliab., 2001
SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer.
Microelectron. Reliab., 2001