Heguang Li
According to our database1,
Heguang Li
authored at least 3 papers
between 2019 and 2023.
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Bibliography
2023
IEEE J. Solid State Circuits, 2023
2022
A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2019
A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology.
Proceedings of the IEEE International Solid- State Circuits Conference, 2019