Harry Luan

According to our database, Harry Luan authored at least 3 papers between 2020 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics.

James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Mitigating switching variability in carbon nanotube memristors.

James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Memory update characteristics of carbon nanotube memristors (NRAM^®) under circuitry-relevant operation conditions.

Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020