Harrison P. Lee

According to our database, Harrison P. Lee authored at least 8 papers between 2019 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs.

Delgermaa Nergui, Mozhgan Hosseinzadeh, Y. A. Mensah, Harrison P. Lee, D. G. Sam, K. Li, E. X. Zhang, Daniel M. Fleetwood, John D. Cressler

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Anomalous Mixed-Mode Damage Effects in SiGe HBTs at Cryogenic Temperatures.

Harrison P. Lee, Delgermaa Nergui, Jeffrey W. Teng, Jackson P. Moody, Nelson Sepúlveda-Ramos, John D. Cressler

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Using Pulsed-Mode Measurements of SiGe HBTs for Non-Destructive, Improved RF-SOA Estimation.

Nelson Sepúlveda-Ramos, Harrison P. Lee, Jeffrey W. Teng, John D. Cressler

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

TCAD-Based Design of SiGe HBT Germanium Profiles via Bayesian Optimization.

Justin P. Heimerl, Jeffrey W. Teng, Harrison P. Lee, Delgermaa Nergui, Jackson P. Moody, John D. Cressler

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2023

The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs.

Harrison P. Lee, Nelson Sepúlveda-Ramos, Jeffrey W. Teng, Jackson P. Moody, Delgermaa Nergui, Brett L. Ringel, Zachary R. Brumbach, Alizeh Premani, Uppili S. Raghunathan, Vibhor Jain, John D. Cressler

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2021

Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs.

Harrison P. Lee, Jeffrey W. Teng, Nelson Sepúlveda-Ramos, John D. Cressler

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020

Physics of Hot Carrier Degradation Under Saturation Mode Operation in SiGe HBTs.

Uppili S. Raghunathan, Pui Yee, Dave Brochu, Vibhor Jain, Harrison P. Lee, John D. Cressler, Dimitris P. Ioannou

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019

Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown.

Rafael Perez Martinez, Uppili S. Raghunathan, Brian R. Wier, Harrison P. Lee, John D. Cressler

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019