Harald Gossner
Orcid: 0000-0002-6280-3613
According to our database1,
Harald Gossner
authored at least 22 papers
between 2001 and 2025.
Collaborative distances:
Collaborative distances:
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Bibliography
2025
IEEE Trans. Instrum. Meas., 2025
2018
Contact and junction engineering in bulk FinFET technology for improved ESD/latch-up performance with design trade-offs and its implications on hot carrier reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
2017
Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete?
Proceedings of the 30th International Conference on VLSI Design and 16th International Conference on Embedded Systems, 2017
2016
A Fully-Integrated Radio-Frequency Power Amplifier in 28nm CMOS Technology Mounted in BGA Package.
Proceedings of the 29th International Conference on VLSI Design and 15th International Conference on Embedded Systems, 2016
2015
2012
Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, 2012
2010
Microelectron. Reliab., 2010
2009
Microelectron. Reliab., 2009
Microelectron. Reliab., 2009
2007
Microelectron. Reliab., 2007
Proceedings of the 2007 IEEE International Solid-State Circuits Conference, 2007
Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, 2007
2006
Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006
2005
A Dedicated TLP Set-Up to Investigate the ESD Robustness of RF Elements and Circuits.
Microelectron. Reliab., 2005
Microelectron. Reliab., 2005
2004
Proceedings of the 17th International Conference on VLSI Design (VLSI Design 2004), 2004
2003
Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies.
Microelectron. Reliab., 2003
2002
Microelectron. Reliab., 2002
Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development.
Microelectron. Reliab., 2002
2001
Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices.
Microelectron. Reliab., 2001
Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology.
Microelectron. Reliab., 2001
Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase.
Microelectron. Reliab., 2001