Hao Zhang
Orcid: 0000-0002-5765-940XAffiliations:
- Nanjing Research Institute of Electronics Technology, China
- Southeast University, Nanjing, China (PhD 2010)
According to our database1,
Hao Zhang
authored at least 17 papers
between 2020 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
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Bibliography
2024
IEEE Trans. Circuits Syst. II Express Briefs, October, 2024
A 22-mW 0.9-2-GHz mixer-first receiver 8-phase overlap-suppressed 1/4 duty cycle LO for harmonic rejection.
Microelectron. J., 2024
A Ka-band 27.6-dBm power amplifier with a compression-state large-signal matching approach in 130-nm CMOS SOI technology.
Microelectron. J., 2024
2023
A two-way three-stage W-band power amplifier with series-parallel inductor-based T-type inter-stage matching network.
Microelectron. J., 2023
Proceedings of the IEEE International Conference on Integrated Circuits, 2023
2022
A Broadband SiGe HBT Cascode Power Amplifier Achieving Watt-Level Peak Output Power With 38.6% PAE and 90.9% Large-Signal Fractional Bandwidth.
IEEE Trans. Circuits Syst. II Express Briefs, 2022
Analysis and Design of High-Efficiency Charge Pumps With Improved Current Driving Capability Using Gate Voltage Boosting Technique.
IEEE Trans. Circuits Syst. I Regul. Pap., 2022
IEEE Trans. Circuits Syst. I Regul. Pap., 2022
J. Circuits Syst. Comput., 2022
IEICE Electron. Express, 2022
An Inductor-Less RF Transmitter Using Harmonic-Rejection Edge Combiner with -40 dBc HD3 and -52 dBc HD5 for Low-Power Biomedical Applications.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2022
A 2.45 GHz Dual-Path CMOS RF-to-DC Rectifier with 27 dB Input Range and -20.7 dBm Sensitivity.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2022
2021
A 30-to-41 GHz SiGe Power Amplifier With Optimized Cascode Transistors Achieving 22.8 dBm Output Power and 27% PAE.
IEEE Trans. Circuits Syst. II Express Briefs, 2021
IEEE Access, 2021
Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021
A 25-to-40 GHz Asymmetric Single-Pole Double-Throw Switch Using Triple-Well CMOS Device.
Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021
2020
A 22-to-47 GHz 2-Stage LNA With 22.2 dB Peak Gain by Using Coupled L-Type Interstage Matching Inductors.
IEEE Trans. Circuits Syst., 2020