Hao Zhang

Orcid: 0000-0002-5765-940X

Affiliations:
  • Nanjing Research Institute of Electronics Technology, China
  • Southeast University, Nanjing, China (PhD 2010)


According to our database1, Hao Zhang authored at least 17 papers between 2020 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Links

Online presence:

On csauthors.net:

Bibliography

2024
A 25-32-GHz Frequency Doubler With 21% Efficiency and 41-dBc Fundamental Rejection.
IEEE Trans. Circuits Syst. II Express Briefs, October, 2024

A 22-mW 0.9-2-GHz mixer-first receiver 8-phase overlap-suppressed 1/4 duty cycle LO for harmonic rejection.
Microelectron. J., 2024

A Ka-band 27.6-dBm power amplifier with a compression-state large-signal matching approach in 130-nm CMOS SOI technology.
Microelectron. J., 2024

2023
A two-way three-stage W-band power amplifier with series-parallel inductor-based T-type inter-stage matching network.
Microelectron. J., 2023

A W-Band Low-Noise Amplifier Using Gm-Boosting Technique with Weak Coupling.
Proceedings of the IEEE International Conference on Integrated Circuits, 2023

2022
A Broadband SiGe HBT Cascode Power Amplifier Achieving Watt-Level Peak Output Power With 38.6% PAE and 90.9% Large-Signal Fractional Bandwidth.
IEEE Trans. Circuits Syst. II Express Briefs, 2022

Analysis and Design of High-Efficiency Charge Pumps With Improved Current Driving Capability Using Gate Voltage Boosting Technique.
IEEE Trans. Circuits Syst. I Regul. Pap., 2022

An X-Band CMOS VCO Using Ultra-Wideband Dual Common-Mode Resonance Technique.
IEEE Trans. Circuits Syst. I Regul. Pap., 2022

A Fully Integrated S-Band Phase-Array Receiver in 0.13 μm CMOS SOI.
J. Circuits Syst. Comput., 2022

A 0.015mW quasi-passive reconfigurable complex band-pass filter for analog baseband.
IEICE Electron. Express, 2022

An Inductor-Less RF Transmitter Using Harmonic-Rejection Edge Combiner with -40 dBc HD3 and -52 dBc HD5 for Low-Power Biomedical Applications.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2022

A 2.45 GHz Dual-Path CMOS RF-to-DC Rectifier with 27 dB Input Range and -20.7 dBm Sensitivity.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2022

2021
A 30-to-41 GHz SiGe Power Amplifier With Optimized Cascode Transistors Achieving 22.8 dBm Output Power and 27% PAE.
IEEE Trans. Circuits Syst. II Express Briefs, 2021

Design of a Wideband CMOS Balun and Its Application in a Wideband RF Front-End.
IEEE Access, 2021

A DC-4GHz High Linearity Attenuator with Negative Temperature Coefficient.
Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021

A 25-to-40 GHz Asymmetric Single-Pole Double-Throw Switch Using Triple-Well CMOS Device.
Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021

2020
A 22-to-47 GHz 2-Stage LNA With 22.2 dB Peak Gain by Using Coupled L-Type Interstage Matching Inductors.
IEEE Trans. Circuits Syst., 2020


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