Hao-Yi Lu
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2024
Engineering HZO by Flat Amorphous TiN with 0.3nm Roughness Achieving Uniform c-Axis Alignment, Record High Breakdown Field (~10nm HZO), and Record Final 2Pr of 56 μC/cm<sup>2</sup> with Endurance > 4E12.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024