Hao-I Yang

According to our database1, Hao-I Yang authored at least 15 papers between 2008 and 2014.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2014
A 40 nm 512 kb Cross-Point 8 T Pipeline SRAM With Binary Word-Line Boosting Control, Ripple Bit-Line and Adaptive Data-Aware Write-Assist.
IEEE Trans. Circuits Syst. I Regul. Pap., 2014

2013
A 40nm 1.0Mb 6T pipeline SRAM with digital-based Bit-Line Under-Drive, Three-Step-Up Word-Line, Adaptive Data-Aware Write-Assist with VCS tracking and Adaptive Voltage Detector for boosting control.
Proceedings of the 2013 IEEE International SOC Conference, Erlangen, Germany, 2013

A 40nm 1.0Mb pipeline 6T SRAM with variation-tolerant Step-Up Word-Line and Adaptive Data-Aware Write-Assist.
Proceedings of the 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 2013

2012
A 0.33-V, 500-kHz, 3.94-µW 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist.
IEEE Trans. Circuits Syst. II Express Briefs, 2012

Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array.
Proceedings of Technical Program of 2012 VLSI Design, Automation and Test, 2012

An all-digital Read Stability and Write Margin characterization scheme for CMOS 6T SRAM array.
Proceedings of Technical Program of 2012 VLSI Design, Automation and Test, 2012

A 55nm 0.5V 128Kb cross-point 8T SRAM with data-aware dynamic supply Write-assist.
Proceedings of the IEEE 25th International SOC Conference, 2012

A 55nm 0.55v 6T SRAM with variation-tolerant dual-tracking word-line under-drive and data-aware write-assist.
Proceedings of the International Symposium on Low Power Electronics and Design, 2012

High-performance 0.6V VMIN 55nm 1.0Mb 6T SRAM with adaptive BL bleeder.
Proceedings of the 2012 IEEE International Symposium on Circuits and Systems, 2012

2011
Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High-kappa Metal-Gate Devices.
IEEE Trans. Very Large Scale Integr. Syst., 2011

Impacts of NBTI/PBTI on Timing Control Circuits and Degradation Tolerant Design in Nanoscale CMOS SRAM.
IEEE Trans. Circuits Syst. I Regul. Pap., 2011

Impacts of gate-oxide breakdown on power-gated SRAM.
Microelectron. J., 2011

A high-performance low VMIN 55nm 512Kb disturb-free 8T SRAM with adaptive VVSS control.
Proceedings of the IEEE 24th International SoC Conference, SOCC 2011, Taipei, Taiwan, 2011

2009
Impacts of NBTI and PBTI on Power-gated SRAM with High-k Metal-gate Devices.
Proceedings of the International Symposium on Circuits and Systems (ISCAS 2009), 2009

2008
Low-power floating bitline 8-T SRAM design with write assistant circuits.
Proceedings of the 21st Annual IEEE International SoC Conference, SoCC 2008, 2008


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