Hans Reisinger

According to our database, Hans Reisinger authored at least 17 papers between 2009 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.

Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs.

Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability.

Christian Bogner, Christian Schlünder, Michael Waltl, Hans Reisinger, Tibor Grasser

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs.

Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays.

Christian Bogner, Tibor Grasser, Michael Waltl, Hans Reisinger, Christian Schlünder

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation.

Paul Salmen, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Gerald Rescher, Thomas Aichinger

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs.

Sebastian Maaß, Hans Reisinger, Thomas Aichinger, Gerald Rescher

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

From Device Aging Physics to Automated Circuit Reliability Sign Off.

Christian Schlünder, Katja Waschneck, Peter Rotter, Susanne Lachenmann, Hans Reisinger, Franz Ungar, Georg Georgakos

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification.

Christian Schlünder, Katja Puschkarsky, Gunnar Andreas Rott, Wolfgang Gustin, Hans Reisinger

Microelectron. Reliab., 2018

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs.

Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.

Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI.

Katja Puschkarsky, Hans Reisinger, Christian Schlünder, Wolfgang Gustin, Tibor Grasser

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2016

Degradation and recovery of variability due to BTI.

Christian Schlünder, Jörg Berthold, Fabian Proebster, Andreas Martin, Wolfgang Gustin, Hans Reisinger

Microelectron. Reliab., 2016

2014

Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors.

Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser

Microelectron. Reliab., 2014

Characterization and modeling of charge trapping: From single defects to devices.

Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Goes, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer

Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014

2012

New insights on the PBTI phenomena in SiON pMOSFETs.

Karina Rott, Hans Reisinger, Stefano Aresu, Christian Schlünder, Klaus Kölpin, Wolfgang Gustin, Tibor Grasser

Microelectron. Reliab., 2012

2009

On the temperature and voltage dependence of short-term negative bias temperature stress.

Ph. Hehenberger, P.-J. Wagner, Hans Reisinger, Tibor Grasser

Microelectron. Reliab., 2009