Hangyun Jung
According to our database1,
Hangyun Jung
authored at least 3 papers
between 2012 and 2018.
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Bibliography
2018
A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018
2013
A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme.
IEEE J. Solid State Circuits, 2013
2012
A 1.2V 30nm 3.2Gb/s/pin 4Gb DDR4 SDRAM with dual-error detection and PVT-tolerant data-fetch scheme.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012