Hangbing Lv

According to our database, Hangbing Lv authored at least 19 papers between 2006 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.

Qiqiao Wu, Yue Cao, Qing Luo, Haijun Jiang, Zhongze Han, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Jianguo Yang, Ming Liu

IEEE J. Solid State Circuits, January, 2024

2023

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.

Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang

Adv. Intell. Syst., November, 2023

A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory.

Yulin Zhao, Yuan Wang, Donglin Zhang, Zhongze Han, Qiao Hu, Xuanzhi Liu, Qingting Ding, Jinhui Cheng, Wenjun Zhang, Yue Cao, Ruixi Zhou, Qing Luo, Jianguo Yang, Hangbing Lv

Sci. China Inf. Sci., May, 2023

A 9Mb HZO-Based Embedded FeRAM with 10¹²-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.

Jianguo Yang, Qing Luo, Xiaoyong Xue, Haijun Jiang, Qiqiao Wu, Zhongze Han, Yue Cao, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Ming Liu

Proceedings of the IEEE International Solid- State Circuits Conference, 2023

2022

A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices.

Jianguo Yang, Ruijun Lin, Keji Zhou, Yuejun Zhang, Xiaoyong Xue, Hangbing Lv

Microelectron. J., 2022

2021

High-Density 3-D Stackable Crossbar 2D2R nvTCAM With Low-Power Intelligent Search for Fast Packet Forwarding in 5G Applications.

Keji Zhou, Xiaoyong Xue, Jianguo Yang, Xiaoxin Xu, Hangbing Lv, Ming-e Jing, Jing Li, Xiaoyang Zeng, Ming Liu

IEEE J. Solid State Circuits, 2021

Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications.

Qingting Ding, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Xiaoyan Li, Hangbing Lv, Jianguo Yang, Qing Luo, Peng Yuan, Feng Zhang, Ming Liu

Sci. China Inf. Sci., 2021

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µ m² Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference.

Jianguo Yang, Xiaoyong Xue, Xiaoxin Xu, Qiao Wang, Haijun Jiang, Jie Yu, Danian Dong, Feng Zhang, Hangbing Lv, Ming Liu

Proceedings of the IEEE International Solid-State Circuits Conference, 2021

Scaling Potential Analysis for the CMOS Compatible Ox-RRAM.

Xiaoxin Xu, Wenxuan Sun, Jie Yu, Jinru Lai, Danian Dong, Hangbing Lv

Proceedings of the IEEE International Memory Workshop, 2021

2020

A Low Power 4T2C nvSRAM With Dynamic Current Compensation Operation Scheme.

Chao Liu, Jianguo Yang, Pengfei Jiang, Qiao Wang, Donglin Zhang, Tiancheng Gong, Qingting Ding, Yuling Zhao, Qing Luo, Xiaoyong Xue, Hangbing Lv, Ming Liu

IEEE Trans. Very Large Scale Integr. Syst., 2020

Ion-Gated Transistor: An Enabler for Sensing and Computing Integration.

Xianbao Bu, Han Xu, Dashan Shang, Yue Li, Hangbing Lv, Qi Liu

Adv. Intell. Syst., 2020

A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm² using Sneaking Current Suppression and Compensation Techniques.

Jianguo Yang, Xiaoyong Xue, Xiaoxin Xu, Hangbing Lv, Feng Zhang, Xiaoyang Zeng, Meng-Fan Chang, Ming Liu

Proceedings of the IEEE Symposium on VLSI Circuits, 2020

2019

A 0.75 V reference clamping sense amplifier for low-power high-density ReRAM with dynamic pre-charge technique.

Jiahao Yin, Chunmeng Dou, Danian Dong, Jie Yu, Xiaoxin Xu, Qing Luo, Tiancheng Gong, Lu Tai, Peng Yuan, Xiaoyong Xue, Ming Liu, Hangbing Lv

IEICE Electron. Express, 2019

A 28nm 512Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for extremely low bit error rate of cryptographic key.

Xiaoyong Xue, Jianguo Yang, Yuejun Zhang, Mingyu Wang, Hangbing Lv, Xiaoyang Zeng, Ming Liu

Proceedings of the IEEE Asian Solid-State Circuits Conference, 2019

A High Reliability 500 µW Resistance-to-Digital Interface Circuit for SnO2 Gas Sensor IoT Applications.

Jianguo Yang, Xiaowen Li, Qingting Ding, Xiaoyong Xue, Xiaoxin Xu, Qing Luo, Hangbing Lv, Ming Liu

Proceedings of the 13th IEEE International Conference on ASIC, 2019

Resistive Switching Devices: Mechanism, Performance and Integration.

Ming Liu, Qi Liu, Hangbing Lv, Shibing Long

Proceedings of the Handbook of Memristor Networks., 2019

2018

Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F² and K-means Clustering for Power Reduction.

Keji Zhou, Xiaoyong Xue, Jianguo Yang, Xiaoxin Xu, Hangbing Lv, Mingyu Wang, Ming-e Jing, Wenjun Liu, Xiaoyang Zeng, Steve S. Chung, Jing Li, Ming Liu

Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018

2017

A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement.

Xiaowei Han, Qian Jia, Hongbin Sun, Longfei Wang, Huaqiang Wu, Yimao Cai, Feng Zhang, Yongyi Xie, Fangxu Dong, Xiaoguang Wang, Xiaofei Xue, Li Pang, Xiaoqing Zhao, Mengnan Wu, Pu Bai, Qi Liu, Hangbing Lv, Bing Yu, Chao Zhao, He Qian, Ru Huang, Ming Liu, Yumei Zhou, Nanning Zheng, Qiwei Ren

Proceedings of the 2017 IEEE Custom Integrated Circuits Conference, 2017

2006

Electronic properties of GST for non-volatile memory.

Hangbing Lv, Peng Zhou, Yinyin Lin, Tingao Tang, Baowei Qiao, Yunfeng Lai, Jie Feng, Bingchu Cai, Bomy Chen

Microelectron. J., 2006