Hang-Ah Park

According to our database, Hang-Ah Park authored at least 1 paper in 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Innovative Barrier Metal-Less Metal Gate Scheme Leading to Highly Reliable Cell Characteristics for 8th Generation 512Gb 3D NAND Flash Memory.

Hang-Ah Park, Sejun Park, Min-Tai Yu, Ye-Chan Kim, Cheon Ho Park, Jung Hoon Lee, Jun Eon Jin, Dawoon Jeung, Hauk Han, Tai-Soo Lim, Min-Kyu Jeong, Mincheol Park, Bong-Tae Park, Sunghoi Hur

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024