Hamid Amini Moghadam

According to our database, Hamid Amini Moghadam authored at least 4 papers between 2016 and 2021.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2021

Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method.

Mayank Chaturvedi, Sima Dimitrijev, Hamid Amini Moghadam, Daniel Haasmann, Peyush Pande, Utkarsh Jadli

IEEE Access, 2021

2020

Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs.

Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Jordan R. Nicholls, Sima Dimitrijev

IEEE Access, 2020

The Correct Equation for the Current Through Voltage-Dependent Capacitors.

Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Jordan R. Nicholls, Peyush Pande, Sima Dimitrijev

IEEE Access, 2020

2016

Active defects in MOS devices on 4H-SiC: A critical review.

Hamid Amini Moghadam, Sima Dimitrijev, Jisheng Han, Daniel Haasmann

Microelectron. Reliab., 2016