Hak-Kee Jung

According to our database1, Hak-Kee Jung authored at least 12 papers between 2007 and 2018.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2018
Analysis of Flat-Band-Voltage Dependent Breakdown Voltage for 10 nm Double Gate MOSFET.
J. Inform. and Commun. Convergence Engineering, 2018

2012
The Analysis of Breakdown Voltage for the Double-gate MOSFET Using the Gaussian Doping Distribution.
J. Inform. and Commun. Convergence Engineering, 2012

2011
Influence of Surface Texturing on the Electrical and Optical Properties of Aluminum Doped Zinc Oxide Thin Films.
J. Inform. and Commun. Convergence Engineering, 2011

Analysis on DIBL of DGMOSFET for Device Parameters.
J. Inform. and Commun. Convergence Engineering, 2011

Analysis of Subthreshold Characteristics for Device Parameter of DGMOSFET Using Gaussian Function.
J. Inform. and Commun. Convergence Engineering, 2011

Analysis of Doping Profile Dependent Threshold Voltage for DGMOSFET Using Gaussian Function.
J. Inform. and Commun. Convergence Engineering, 2011

Structure-Dependent Subthreshold Swings for Double-gate MOSFETs.
J. Inform. and Commun. Convergence Engineering, 2011

2010
Design of DGMOSFET for Optimum Subthreshold Characteristics using MicroTec.
J. Inform. and Commun. Convergence Engineering, 2010

Threshold Voltage Dependence on Bias for FinFET using Analytical Potential Model.
J. Inform. and Commun. Convergence Engineering, 2010

2009
Analysis of Transport Characteristics for FinFET Using Three Dimension Poisson's Equation.
J. Inform. and Commun. Convergence Engineering, 2009

Subthreshold Current Model of FinFET Using Three Dimensional Poisson's Equation.
J. Inform. and Commun. Convergence Engineering, 2009

2007
Analysis of Short Channel Effects Using Analytical Transport Model For Double Gate MOSFET.
J. Inform. and Commun. Convergence Engineering, 2007


  Loading...