Haiwen Xu

Orcid: 0000-0002-0302-6439

According to our database1, Haiwen Xu authored at least 17 papers between 2009 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Joint decision-making for divisional seru scheduling and worker assignment considering process sequence constraints.
Ann. Oper. Res., July, 2024

Proximal Alternating Direction Method of Multipliers with Convex Combination Proximal Centers.
Asia Pac. J. Oper. Res., June, 2024

SMWE-GFPNNet: A high-precision and robust method for forest fire smoke detection.
Knowl. Based Syst., 2024

Data Quality-based Gradient Optimization for Recurrent Neural Networks.
Proceedings of the Companion Proceedings of the ACM on Web Conference 2024, 2024

First Demonstration of Superconducting Nb Contact on Heavily-Doped Group IV Semiconductor.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023
MMFNet: Forest Fire Smoke Detection Using Multiscale Convergence Coordinated Pyramid Network With Mixed Attention and Fast-Robust NMS.
IEEE Internet Things J., October, 2023

Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10<sup>-10</sup> Ω-cm<sup>2</sup> ρc from Cryogenic (5 K) to Room Temperature.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Building Recognition Based on Improved U-Net Model.
Proceedings of the 2023 3rd International Conference on Big Data, 2023

2022
First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10<sup>-10</sup> Ω-cm<sup>2</sup> P-Type Contact Resistivity: Record 2.5×10<sup>21</sup> cm<sup>-3</sup> Active Doping and Demonstration on Highly-Scaled 3D Structures.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V).
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Novel Field-Plate Integrated Mesa-Type InGaAs/InP Avalanche Photodiode.
Proceedings of the International Conference on IC Design and Technology, 2022

2021
First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Heterogeneously Integrated with Si Photonics on SOI Platform for 1550 nm Detection.
Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021

2015
The Time-Band Approximation Model on Flight Operations Recovery Model Considering Random Flight Flying Time in China.
Proceedings of the 2015 IEEE International Conference on Systems, 2015

2014
On the $$O(1/t)$$ convergence rate of the LQP prediction-correction method.
Optim. Lett., 2014

2013
Restricted Isometry Property of Principal Component Pursuit with Reduced Linear Measurements.
J. Appl. Math., 2013

2009
An Entropy Interval Newton Method for Linear Complementarity Problem.
Proceedings of the Second International Joint Conference on Computational Sciences and Optimization, 2009


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