Haimeng Huang
Orcid: 0000-0002-3000-741X
According to our database1,
Haimeng Huang
authored at least 10 papers
between 2011 and 2023.
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Bibliography
2023
Modeling and simulation of an insulated-gate HEMT using p-SnO<sub>2</sub> gate for high V<sub>TH</sub> design.
Microelectron. J., September, 2023
Temperature Dependent Optimization for Specific On-Resistance for 900 V Superjunction MOSFETs: Numerical Calculation and Comparison.
Proceedings of the 15th IEEE International Conference on ASIC, 2023
Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction.
Proceedings of the 15th IEEE International Conference on ASIC, 2023
2021
Proceedings of the 14th IEEE International Conference on ASIC, 2021
A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances.
Proceedings of the 14th IEEE International Conference on ASIC, 2021
2020
Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer.
IEICE Electron. Express, 2020
IEEE Access, 2020
2019
SiC trench MOSFET with integrated side-wall Schottky barrier diode having P<sup>+</sup> electric field shield.
IEICE Electron. Express, 2019
Analytical Models of Breakdown Voltage and Specific On-Resistance for Vertical GaN Unipolar Devices.
IEEE Access, 2019
2011
Proceedings of the 2011 IEEE 9th International Conference on ASIC, 2011