Hai Jiang

Orcid: 0000-0002-6653-2304

Affiliations:
  • Samsung Electronics, Yongin-City, Korea


According to our database1, Hai Jiang authored at least 9 papers between 2019 and 2021.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2021
Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability Prediction.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
Investigating of SER in 28 nm FDSOI-Planar and Comparing with SER in Bulk-FinFET.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Backside Alpha-Irradiation Test in Flip-Chip Package in EUV 7 nm FinFET SRAM.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Early Diagnosis and Prediction of Wafer Quality Using Machine Learning on sub-10nm Logic Technology.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020


Reliability on EUV Interconnect Technology for 7nm and beyond.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Aging-Aware Design Verification Methods Under Real Product Operating Conditions.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Localized Layout Effect Related Reliability Approach in 8nm FinFETs Technology: From Transistor to Circuit.
Proceedings of the IEEE International Reliability Physics Symposium, 2019


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