Hai Jiang
Orcid: 0000-0002-6653-2304Affiliations:
- Samsung Electronics, Yongin-City, Korea
According to our database1,
Hai Jiang
authored at least 9 papers
between 2019 and 2021.
Collaborative distances:
Collaborative distances:
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on orcid.org
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Bibliography
2021
Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability Prediction.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Early Diagnosis and Prediction of Wafer Quality Using Machine Learning on sub-10nm Logic Technology.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Localized Layout Effect Related Reliability Approach in 8nm FinFETs Technology: From Transistor to Circuit.
Proceedings of the IEEE International Reliability Physics Symposium, 2019