Hahng Sim

According to our database, Hahng Sim authored at least 1 paper in 2018.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2018

Impact of etch angles on cell characteristics in 3D NAND flash memory.

Young-Taek Oh, Kyu-Beom Kim, Sang-Hoon Shin, Hahng Sim, Nguyen Van Toan, Takahito Ono, Yunheub Song

Microelectron. J., 2018