H. W. Leite Alves

According to our database, H. W. Leite Alves authored at least 8 papers between 2003 and 2005.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2005

Ab initio calculation of the SiC (100) surfaces phonon dispersion.

J. S. Soares, H. W. Leite Alves

Microelectron. J., 2005

Ab initio calculation of the structural and electronic properties of the SiC (100) Surfaces.

J. S. Soares, H. W. Leite Alves

Microelectron. J., 2005

Ab initio study of the nitridation of the GaAs (100) surfaces.

A. P. Castro, H. W. Leite Alves

Microelectron. J., 2005

2003

Theoretical optical parameters for III-nitride semiconductors.

E. Silva Pinto, R. de Paiva, L. C. de Carvalho, H. W. Leite Alves, J. L. A. Alves

Microelectron. J., 2003

Dynamical and thermodynamic properties of III-nitrides.

L. S. Pereira, A. M. Santos, J. L. A. Alves, H. W. Leite Alves, J. R. Leite

Microelectron. J., 2003

Atomic and electronic structures of In_xGa_1-xN quantum dots.

C. de Oliveira, J. L. A. Alves, H. W. Leite Alves, R. A. Nogueira, J. R. Leite

Microelectron. J., 2003

Theoretical studies of poly(para-phenylene vinylene) (PPV) and poly(para-phenylene) (PPP).

L. C. de Carvalho, C. N. Dos Santos, H. W. Leite Alves, J. L. A. Alves

Microelectron. J., 2003

Vibrational spectra of adsorbed hydrogen on GaN(001) surfaces.

F. L. de Almeida, L. C. de Carvalho, H. W. Leite Alves, J. L. A. Alves

Microelectron. J., 2003