Gyuseong Kang

According to our database1, Gyuseong Kang authored at least 10 papers between 2015 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
14nm FinFET Node Embedded MRAM Technology for Automotive Non-Volatile RAM Applications with Endurance Over 1E12-Cycles.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

A 14nm 128Mb eMRAM Implemented with 17.88Mb/mm<sup>2</sup> at 0.60V for Auto-G1 Applications.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023
A 14nm 128Mb Embedded MRAM Macro achieved the Best Figure-Of-Merit with 80MHz Read operation and 18.1Mb/mm² implementation at 0.64V.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022
Stochastic SOT Device Based SNN Architecture for On-Chip Unsupervised STDP Learning.
IEEE Trans. Computers, 2022

2019
Charge-Recycling-Based Redundant Write Prevention Technique for Low-Power SOT-MRAM.
IEEE Trans. Very Large Scale Integr. Syst., 2019

2018
Spin Orbit Torque Device based Stochastic Multi-bit Synapses for On-chip STDP Learning.
Proceedings of the International Symposium on Low Power Electronics and Design, 2018

Charge-Recycling based Redundant Write Prevention Technique for Low Power SOT-MRAM.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2018

2017
Embedded DRAM-Based Memory Customization for Low-Cost FFT Processor Design.
IEEE Trans. Very Large Scale Integr. Syst., 2017

A DRAM based physical unclonable function capable of generating >10<sup>32</sup> Challenge Response Pairs per 1Kbit array for secure chip authentication.
Proceedings of the 2017 IEEE Custom Integrated Circuits Conference, 2017

2015
A Refresh-Less eDRAM Macro With Embedded Voltage Reference and Selective Read for an Area and Power Efficient Viterbi Decoder.
IEEE J. Solid State Circuits, 2015


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