Gyoyoung Jin

According to our database, Gyoyoung Jin authored at least 3 papers between 1998 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2017

The improvement of HEIP immunity using STI engineering at DRAM.

Seung Uk Han, Youngyoun Lee, Yongdoo Kim, Jemin Park, Junhee Lim, Satoru Yamada, Hyeongsun Hong, Kyupil Lee, Gyoyoung Jin, Eunseung Jung

Microelectron. Reliab., 2017

2016

Off-state degradation with ac bias in PMOSFET.

Segeun Park, Hyuckchai Jung, Jeonghoon Oh, Ilgweon Kim, Hyoungsun Hong, Gyoyoung Jin, Yonghan Roh

Microelectron. Reliab., 2016

1998

Observation of Anomalous Negative Differential Resistance in Diode Breakdown Simulation Using Carrier Temperature Dependent Impact Ionization.

Edwin C. Kan, Gyoyoung Jin, Zhiping Yu, Robert W. Dutton

VLSI Design, 1998