Gwanhyeob Koh
According to our database1,
Gwanhyeob Koh
authored at least 6 papers
between 2002 and 2020.
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Bibliography
2020
A 14.7Mb/mm<sup>2</sup> 28nm FDSOI STT-MRAM with Current Starved Read Path, 52Ω/Sigma Offset Voltage Sense Amplifier and Fully Trimmable CTAT Reference.
Proceedings of the IEEE Symposium on VLSI Circuits, 2020
2019
Proceedings of the IEEE International Reliability Physics Symposium, 2019
2017
28-nm 1T-1MTJ 8Mb 64 I/O STT-MRAM with symmetric 3-section reference structure and cross-coupled sensing amplifier.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2017
2005
IEEE J. Solid State Circuits, 2005
2003
A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme.
IEEE J. Solid State Circuits, 2003
2002
The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon.
Microelectron. Reliab., 2002