Guoxuan Qin

According to our database, Guoxuan Qin authored at least 11 papers between 2009 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

A 50Gb/s PAM4 receiver with mid-frequency compensation and decision jitter cancellation.

Yangyan Lv, Sheng Xie, Guoxuan Qin, Luhong Mao, Ruiliang Song, Naibai Zhang

IEICE Electron. Express, 2024

2021

Statistical Temperature Coefficient Distribution in Analog RRAM Array: Impact on Neuromorphic System and Mitigation Method.

Heng Xu, Yue Sun, Yangyang Zhu, Xiaohu Wang, Guoxuan Qin

CoRR, 2021

2018

Impact of finger numbers on the performance of proton-radiated SiGe power HBTs at room and cryogenic temperatures.

Zheng Zhao, Ningyue Jiang, Zhenqiang Ma, Guoxuan Qin

Microelectron. Reliab., 2018

2016

Characterization of flexible radio-frequency spiral inductors on a plastic substrate.

Guoxuan Qin, Hao Liu, Yanmeng Xu, Mengjiao Dang, Jianguo Ma, Zhenqiang Ma, Xuejiao Chen, Tao Luo

IEICE Electron. Express, 2016

On the performance characterization of silicon MOSFETs on 4° off-axis substrate.

Guoxuan Qin, Hao Liu, You Guo, Mengjiao Dang, Jianguo Ma, Zhenqiang Ma, Tao Luo

IEICE Electron. Express, 2016

2013

On the configuration- and frequency-dependent linearity characteristics of SiGe HBTs under different impedance matching conditions.

Guoxuan Qin, Guogong Wang, Ningyue Jiang, Jianguo Ma, Zhenqiang Ma

Microelectron. Reliab., 2013

Experimental Characterization of proton Radiated SiGe Power HBTs at Extreme temperatures.

Guoxuan Qin, Jianguo Ma, Ningyue Jiang, Zhenqiang Ma, Pingxi Ma, Marco Racanelli

J. Circuits Syst. Comput., 2013

2012

RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures.

Guoxuan Qin, Yuexing Yan, Ningyue Jiang, Jianguo Ma, Pingxi Ma, Marco Racanelli, Zhenqiang Ma

Microelectron. Reliab., 2012

2011

RF model of flexible microwave single-crystalline silicon nanomembrane PIN diodes on plastic substrate.

Guoxuan Qin, Hao-Chih Yuan, George K. Celler, Weidong Zhou, Jianguo Ma, Zhenqiang Ma

Microelectron. J., 2011

2009

Highly Efficient Monolithic Class E SiGe Power Amplifier Design at 900 and 2400 MHz.

Donald Y. C. Lie, Jerry Lopez, Jeremy D. Popp, Jason F. Rowland, Guogong Wang, Guoxuan Qin, Zhenqiang Ma

IEEE Trans. Circuits Syst. I Regul. Pap., 2009

High-Performance Quantum Dot Lasers and Integrated Optoelectronics on Si.

Zetian Mi, Jun Yang, Pallab K. Bhattacharya, Guoxuan Qin, Zhenqiang Ma

Proc. IEEE, 2009