Guillaume Bourgeois

According to our database, Guillaume Bourgeois authored at least 18 papers between 2017 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

HiBenchLLM: Historical Inquiry Benchmarking for Large Language Models.

Mathieu Chartier, Nabil Dakkoune, Guillaume Bourgeois, Stéphane Jean

Data Knowl. Eng., 2025

2024

Évaluation des capacités de réponse de larges modèles de langage (LLM) pour des questions d'historiens.

Mathieu Chartier, Nabil Dakkoune, Guillaume Bourgeois, Stéphane Jean

Proceedings of the Extraction et Gestion des Connaissances, 2024

2023

Analyse et modélisation de l'impact environnemental du système d'information. (Analysis and modelling of the environmental impact of information system).

Guillaume Bourgeois

PhD thesis, 2023

Multi Level Cell Reliability in Ge-rich GeSbTe-based Phase Change Memory Arrays.

Valentina Meli, Gabriele Navarro, J. Rottner, Niccolo Castellani, S. Martin, N. P. Tran, Guillaume Bourgeois, C. Sabbione, Marie Claire Cyrille

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Outils pour calculer l'empreinte TIC des organisations : adaptation d'une étude européenne.

Guillaume Bourgeois, Kassandra Bigot, Vincent Courboulay, Benjamin Duthil

Proceedings of the Actes du XLI Congrès INFORSID, La Rochelle, France, May 30, 2023

2022

Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate.

Gabriele Navarro, C. Sabbione, Valentina Meli, L. E. Nistor, M. Frei, Julien Garrione, M. Tessaire, F. Fillot, Nicolas Bernier, Emmanuel Nolot, Benoit Sklénard, J. Li, S. Martin, Niccolo Castellani, Guillaume Bourgeois, Marie Claire Cyrille, François Andrieu

Proceedings of the IEEE International Memory Workshop, 2022

TiTe/Ge2Sb2Te5Bi-layer-based Phase-Change Memory Targeting Storage Class Memory.

Giusy Lama, Mathieu Bernard, Julien Garrione, Nicolas Bernier, Niccolo Castellani, Guillaume Bourgeois, Marie Claire Cyrille, François Andrieu, Gabriele Navarro

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement.

Camille Laguna, Mathieu Bernard, Julien Garrione, Niccolo Castellani, Valentina Meli, S. Martin, François Aussenac, D. Rouchon, N. Rochat, Emmanuel Nolot, Guillaume Bourgeois, Marie Claire Cyrille, Liviu Militaru, A. Souifi, François Andrieu, Gabriele Navarro

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction.

C. De Camaret, Guillaume Bourgeois, Olga Cueto, Valentina Meli, S. Martin, D. Despois, V. Beugin, Niccolo Castellani, Marie Claire Cyrille, François Andrieu, Julien Arcamone, Y. Le-Friec, Gabriele Navarro

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

Frequency modulation of conductance level in PCM device for neuromorphic applications.

Ahmed Trabelsi, Carlo Cagli, Tifenn Hirtzlin, Olga Cueto, Marie Claire Cyrille, Elisa Vianello, Valentina Meli, Veronique Sousa, Guillaume Bourgeois, François Andrieu

Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022

Tools for Calculating the ICT Footprint of Organisations: Adaptation of a European Study.

Guillaume Bourgeois, Kassandra Bigot, Vincent Courboulay, Benjamin Duthil

Proceedings of the Information Systems, 2022

2021

Parallel, Proactive and Power Efficient Virtual Network Embedding in a Green and Distributed SD-ODCN Architecture.

Ikhlasse Hamzaoui, Guillaume Bourgeois, Benjamin Duthil, Vincent Courboulay, Hicham Medromi

IEEE Access, 2021

Multilevel Programming Reliability in Si-doped GeSbTe for Storage Class Memory.

Giusy Lama, Mathieu Bernard, Nicolas Bernier, Guillaume Bourgeois, Emmanuel Nolot, Niccolo Castellani, Julien Garrione, Marie Claire Cyrille, Gabriele Navarro, Etienne Nowak

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Multilayer OTS Selectors Engineering for High Temperature Stability, Scalability and High Endurance.

Camille Laguna, Mathieu Bernard, Nicolas Bernier, D. Rouchon, N. Rochat, Julien Garrione, A. Jannaud, Emmanuel Nolot, Valentina Meli, Niccolo Castellani, C. Sabbione, Guillaume Bourgeois, Marie Claire Cyrille, Liviu Militaru, A. Souifi, Gabriele Navarro, Etienne Nowak

Proceedings of the IEEE International Memory Workshop, 2021

2018

Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance.

Anthonin Verdy, Gabriele Navarro, Mathieu Bernard, Sophie Chevalliez, Niccolo Castellani, Emmanuel Nolot, Julien Garrione, Pierre Noe, Guillaume Bourgeois, Veronique Sousa, Marie Claire Cyrille, Etienne Nowak

Proceedings of the IEEE International Reliability Physics Symposium, 2018

OTS selector devices: Material engineering for switching performance.

Marie Claire Cyrille, Anthonin Verdy, Gabriele Navarro, Guillaume Bourgeois, Julien Garrione, Mathieu Bernard, C. Sabbione, Pierre Noe, Etienne Nowak

Proceedings of the 2018 International Conference on IC Design & Technology, 2018

Metal Oxide Resistive Memory (OxRAM) and Phase Change Memory (PCM) as Artificial Synapses in Spiking Neural Networks.

Elisa Vianello, Denys R. B. Ly, Selina La Barbera, Thomas Dalgaty, Niccolo Castellani, Gabriele Navarro, Guillaume Bourgeois, Alexandre Valentian, Etienne Nowak, Damien Querlioz

Proceedings of the 25th IEEE International Conference on Electronics, Circuits and Systems, 2018

2017

Innovative GeS2/Sb2Te3 based phase change memory for low power applications.

Julia Kluge, Anthonin Verdy, Gabriele Navarro, Serge Blonkowski, Veronique Sousa, Sophie Chevalliez, Philippe Kowalczyk, Mathieu Bernard, Nicolas Bernier, Guillaume Bourgeois, Niccolo Castellani, Pierre Noe, Luca Perniola

Proceedings of the 17th Non-Volatile Memory Technology Symposium, 2017