Guanghui Mei

According to our database, Guanghui Mei authored at least 3 papers between 2011 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2012

Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs.

Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu, Lingli Wang, Tingao Tang

Microelectron. J., 2012

2011

Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs.

Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu, Tingao Tang

Proceedings of the 2011 IEEE 9th International Conference on ASIC, 2011

Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study.

Peicheng Li, Guanghui Mei, Guangxi Hu, Ran Liu, Tingao Tang

Proceedings of the 2011 IEEE 9th International Conference on ASIC, 2011