Gregor Pobegen

Orcid: 0000-0001-7046-0617

According to our database1, Gregor Pobegen authored at least 9 papers between 2011 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2024
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2020
Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Similarities and Differences of BTI in SiC and Si Power MOSFETs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs.
Microelectron. Reliab., 2018

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015
Instabilities of SiC MOSFETs during use conditions and following bias temperature stress.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

On the fly characterization of charge trapping phenomena at GaN/dielectric and GaN/AlGaN/dielectric interfaces using impedance measurements.
Proceedings of the 45th European Solid State Device Research Conference, 2015

2011
Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs.
Microelectron. Reliab., 2011


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