Gottfried Strasser
Orcid: 0000-0003-0147-0883Affiliations:
- Vienna University of Technology, Faculty of Electrical Engineering and Information Technology, Austria
According to our database1,
Gottfried Strasser
authored at least 8 papers
between 2006 and 2016.
Collaborative distances:
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Bibliography
2016
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.
Microelectron. Reliab., 2016
2015
High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications.
Microelectron. Reliab., 2015
Proceedings of the 45th European Solid State Device Research Conference, 2015
2013
Sensors, 2013
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications.
Microelectron. Reliab., 2013
2012
Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure.
Microelectron. Reliab., 2012
2011
2006