Glen David Via

According to our database, Glen David Via authored at least 6 papers between 2011 and 2020.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2020

A Decomposition Workflow for Integrated Circuit Verification and Validation.

Adam G. Kimura, Jon Scholl, James Schaffranek, Matthew Sutter, Andrew Elliott, Mike Strizich, Glen David Via

J. Hardw. Syst. Secur., 2020

2017

Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation.

Brian S. Poling, Glen David Via, Ken D. Bole, E. E. Johnson, J. M. McDermott

Microelectron. Reliab., 2017

2016

Evidence for causality between GaN RF HEMT degradation and the E_C-0.57 eV trap in GaN.

A. R. Arehart, A. Sasikumar, Glen David Via, Brian S. Poling, E. R. Heller, S. A. Ringel

Microelectron. Reliab., 2016

2015

Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps.

A. Sasikumar, A. R. Arehart, Glen David Via, B. Winningham, Brian S. Poling, E. R. Heller, S. A. Ringel

Microelectron. Reliab., 2015

2012

Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors.

E. A. Douglas, C. Y. Chang, B. P. Gila, M. R. Holzworth, Kevin S. Jones, Lu Liu, Jinhyung Kim, Soohwan Jang, Glen David Via, Fan Ren, Stephen J. Pearton

Microelectron. Reliab., 2012

2011

AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress.

E. A. Douglas, C. Y. Chang, David J. Cheney, B. P. Gila, Chi-Fai Lo, Liu Lu, M. R. Holzworth, Patrick G. Whiting, Kevin S. Jones, Glen David Via, Jinhyung Kim, Soohwan Jang, Fan Ren, Stephen J. Pearton

Microelectron. Reliab., 2011