Giovanna Sozzi

According to our database, Giovanna Sozzi authored at least 9 papers between 2001 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law.

Giovanna Sozzi, Sergio Sapienza, Giovanni Chiorboli, Lasse Vines, Anders Hallén, Roberta Nipoti

IEEE Access, 2024

Investigating Mesa Structure Impact on C-V Measurements.

Giovanna Sozzi, Giovanni Chiorboli, Lorenzo Perini, Roberta Nipoti

IEEE Access, 2024

2011

Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime.

Antonio Raffo, Sergio Di Falco, Giovanna Sozzi, Roberto Menozzi, Dominique M. M.-P. Schreurs, Giorgio Vannini

Microelectron. Reliab., 2011

A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion.

D. Mari, Mirko Bernardoni, Giovanna Sozzi, Roberto Menozzi, Gilberto Antonio Umana-Membreno, Brett D. Nener

Microelectron. Reliab., 2011

2007

A review of the use of electro-thermal simulations for the analysis of heterostructure FETs.

Giovanna Sozzi, Roberto Menozzi

Microelectron. Reliab., 2007

2004

High reliable high power diode for welding applications.

Paolo Cova, Fioravante Fasce, Pietro Pampili, Marco Portesine, Giovanna Sozzi, Pier Enrico Zani

Microelectron. Reliab., 2004

Temperature-dependent breakdown and hot carrier stress of PHEMTs.

Paolo Cova, Nicola Delmonte, Giovanna Sozzi, Roberto Menozzi

Microelectron. Reliab., 2004

2002

High-electric-field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study.

Giovanna Sozzi, Roberto Menozzi

Microelectron. Reliab., 2002

2001

Gate-lag effects in AlGaAs/GaAs power HFET's.

Mattia Borgarino, Giovanna Sozzi, Andrea Mazzanti, Giovanni Verzellesi

Microelectron. Reliab., 2001