Giorgia Longobardi

According to our database, Giorgia Longobardi authored at least 4 papers between 2014 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuit.

Loizos Efthymiou, Martin Arnold, Giorgia Longobardi, Florin Udrea

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2019

GaN-on-Si Thermoresistive Flow Sensor with Gold Hot-wire.

G. Rhys Jones, Julian W. Gardner, Timothy Vincent, Andrea De Luca, Giorgia Longobardi, Abdalla Eblabla, Khaled Elgaid, Tracy Wotherspoon, Richard Birch, Florin Udrea

Proceedings of the 2019 IEEE SENSORS, Montreal, QC, Canada, October 27-30, 2019, 2019

2018

On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs.

Dario Pagnano, Giorgia Longobardi, Florin Udrea, Jinming Sun, Mohamed Imam, Reenu Garg, Hyeongnam Kim, Alain Charles

Microelectron. Reliab., 2018

2014

The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET - Experiment and TCAD simulations.

Giorgia Longobardi, Florin Udrea, Stephen Sque, Jeroen Croon, Fred Hurkx, Jan Sonsky

Proceedings of the 44th European Solid State Device Research Conference, 2014