Giorgi Aroshvili

According to our database, Giorgi Aroshvili authored at least 1 paper in 2010.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2010

Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si₃N₄.

Sanghyun Seo, Eunjung Cho, Giorgi Aroshvili, Chong Jin, Dimitris Pavlidis, Laurence Considine

IEICE Trans. Electron., 2010