GeunYong Bak

According to our database, GeunYong Bak authored at least 6 papers between 2015 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2021

Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray Radiation.

Donghyuk Yun, Myungsang Park, GeunYong Bak, Sanghyeon Baeg, Shi-Jie Wen

IEEE Access, 2021

DDR4 Data Channel Failure Due to DC Offset Caused by Intermittent Solder Ball Fracture in FBGA Package.

Muhammad Waqar, GeunYong Bak, Junhyeong Kwon, Sanghyeon Baeg

IEEE Access, 2021

2018

Study of proton radiation effect to row hammer fault in DDR4 SDRAMs.

Chul Seung Lim, Kyungbae Park, GeunYong Bak, Donghyuk Yun, Myungsang Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong

Microelectron. Reliab., 2018

Failure signature analysis of power-opens in DDR3 SDRAMs.

Tan Li, Hosung Lee, GeunYong Bak, Sanghyeon Baeg

Microelectron. Reliab., 2018

2017

An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation.

Saqib A. Khan, Chul Seung Lim, GeunYong Bak, Sanghyeon Baeg, Soonyoung Lee

Microelectron. Reliab., 2017

2015

Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beams.

GeunYong Bak, Soonyoung Lee, Hosung Lee, Kyungbae Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Charlie Slayman

Proceedings of the IEEE International Reliability Physics Symposium, 2015