Germain Bossu

According to our database, Germain Bossu authored at least 5 papers between 2020 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Excellent Reliability performances of a truly 5V nBOXFET for Automotive and IOT applications.

D. Lipp, Z. Zhao, G. Krause, Wafa Arfaoui, Elodie Ebrard, Germain Bossu, S. Evseev, Markus Herklotz, Mahesh Siddabathula

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

22FDX™ 5G 28GHz 20dBm Power Amplifier Constant Load and VSWR accelerated aging reliability.

Germain Bossu, Shafi Syed, S. Evseev, Joris Angelo Sundaram Jerome, Wafa Arfaoui, D. Lipp, Mahesh Siddabathula

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Reliability-Conscious MOSFET Compact Modeling with Focus on the Defect-Screening Effect of Hot-Carrier Injection.

Pratik B. Vyas, Ninad Pimparkar, Robert Tu, Wafa Arfaoui, Germain Bossu, Mahesh Siddabathula, Steffen Lehmann, Jung-Suk Goo, Ali B. Icel

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area.

Maria Toledano-Luque, Peter C. Paliwoda, Mohamed Nour, Thomas Kauerauf, Byoung Min, Germain Bossu, Mahesh Siddabathula, Tanya Nigam

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

A Novel HCI Reliability Model for RF/mmWave Applications in FDSOI Technology.

Wafa Arfaoui, Germain Bossu, A. Muehlhoff, D. Lipp, R. Manuwald, T. Chen, Tanya Nigam, Mahesh Siddabathula

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020