Gerhard Knoblinger

According to our database, Gerhard Knoblinger authored at least 21 papers between 2001 and 2021.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2021

A 12-b 16-GS/s RF-Sampling Capacitive DAC for Multi-Band Soft Radio Base-Station Applications With On-Chip Transmission-Line Matching Network in 16-nm FinFET.

Daniel Gruber, Martin Clara, Ramón Sanchez-Perez, Yu-shan Wang, Christoph Duller, Gerald Rauter, Patrick Torta, Gerhard Knoblinger, Kamran Azadet

IEEE J. Solid State Circuits, 2021

2018

A 28nm Low-Voltage Digital Power-Amplifier for QAM-256 WIFI Applications in 0.5mm² Area w/ 2D Digital-Pre-Distortion and Package Combiner.

Antonio Passamani, Davide Ponton, Andreas Wolter, Gerhard Knoblinger, Andrea Bevilacqua

Proceedings of the 25th IEEE International Conference on Electronics, Circuits and Systems, 2018

2017

13.9 A 1.1V 28.6dBm fully integrated digital power amplifier for mobile and wireless applications in 28nm CMOS technology with 35% PAE.

Antonio Passamani, Davide Ponton, Edwin Thaller, Gerhard Knoblinger, Andrea Neviani, Andrea Bevilacqua

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2015

Analysis and design of a 1.1dB-IL third-order Matching Network for Switched-Capacitor PAs.

Antonio Passamani, Davide Ponton, Gerhard Knoblinger, Andrea Bevilacqua

Proceedings of the Nordic Circuits and Systems Conference, 2015

Switched state-space model for a switched-capacitor power amplifier.

Stefan Trampitsch, Gerhard Knoblinger, Mario Huemer

Proceedings of the 2015 IEEE International Symposium on Circuits and Systems, 2015

2011

LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology.

Davide Ponton, Gerhard Knoblinger, Andreas Roithmeier, Federico Cernoia, Marc Tiebout, Michael Fulde, Pierpaolo Palestri

IEEE Trans. Circuits Syst. II Express Briefs, 2011

2009

Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices.

Davide Ponton, Pierpaolo Palestri, David Esseni, Luca Selmi, Marc Tiebout, Bertrand Parvais, Domagoj Siprak, Gerhard Knoblinger

IEEE Trans. Circuits Syst. I Regul. Pap., 2009

Design of Low-Voltage Bandgap Reference Circuits in Multi-Gate CMOS Technologies.

Michael Fulde, Martin Wirnshofer, Gerhard Knoblinger, Doris Schmitt-Landsiedel

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2009), 2009

Assessment of the impact of technology scaling on the performance of LC-VCOs.

Davide Ponton, Gerhard Knoblinger, Andreas Roithmeier, Marc Tiebout, Michael Fulde, Pierpaolo Palestri

Proceedings of the 35th European Solid-State Circuits Conference, 2009

2008

Design of UWB LNA in 45nm CMOS technology: Planar bulk vs. FinFET.

Davide Ponton, Pierpaolo Palestri, David Esseni, Luca Selmi, Marc Tiebout, Bertrand Parvais, Gerhard Knoblinger

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2008), 2008

2007

A merged MuGFET and planar SOI process.

Andrew Marshall, C. Rinn Cleavelin, Weize Xiong, Christian Pacha, Gerhard Knoblinger, Klaus Von Armin, Thomas Schulz, Klaus Schruefer, Ken Matthews, Wolfgang Molzer, Paul Patruno, Christian Russ

Proceedings of the 2007 IEEE International SOC Conference, 2007

SUB-45nm Technology and Design Challenges.

Gerhard Knoblinger, James W. Tschanz, Marcal Pol

Proceedings of the 8th International Symposium on Quality of Electronic Design (ISQED 2007), 2007

Multi-Gate MOSFET Design.

Gerhard Knoblinger

Proceedings of the 8th International Symposium on Quality of Electronic Design (ISQED 2007), 2007

Transient Variations in Emerging SOI Technologies: Modeling and Impact on Analog/Mixed-Signal Circuits.

Michael Fulde, Doris Schmitt-Landsiedel, Gerhard Knoblinger

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2007), 2007

Advances in Multi-Gate MOSFET Circuit Design.

Michael Fulde, Klaus von Arnim, Christian Pacha, Florian Bauer, Christian Russ, Domagoj Siprak, Wade Xiong, Andrew Marshall, C. Rinn Cleavelin, Klaus Schruefer, Doris Schmitt-Landsiedel, Gerhard Knoblinger

Proceedings of the 14th IEEE International Conference on Electronics, 2007

Analog design challenges and trade-offs using emerging materials and devices.

Michael Fulde, Abdelkarim Mercha, Cedric Gustin, Bertrand Parvais, Vaidyanathan Subramanian, Klaus von Arnim, Florian Bauer, Klaus Schruefer, Doris Schmitt-Landsiedel, Gerhard Knoblinger

Proceedings of the 33rd European Solid-State Circuits Conference, 2007

2006

Circuit design issues in multi-gate FET CMOS technologies.

Christian Pacha, Klaus von Arnim, Thomas Schulz, Weize Xiong, Michael Gostkowski, Gerhard Knoblinger, Andrew Marshall, Thomas Nirschl, Jörg Berthold, Christian Russ, Harald Gossner, Charvaka Duvvury, Paul Patruno, C. Rinn Cleavelin, Klaus Schruefer

Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006

Dielectric absorption of low-k materials: extraction, modelling and influence on SAR ADCs.

Michael Kropfitsch, Philipp Riess, Gerhard Knoblinger, Dieter Draxelmayr

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2006), 2006

2002

Modeling the gate-related high-frequency and noise characteristics of deep-submicron MOSFETs.

Rainer Kraus, Gerhard Knoblinger

Proceedings of the IEEE 2002 Custom Integrated Circuits Conference, 2002

2001

A new model for thermal channel noise of deep-submicron MOSFETs and its application in RF-CMOS design.

Gerhard Knoblinger, Peter Klein, Marc Tiebout

IEEE J. Solid State Circuits, 2001

When do we need non-quasistatic CMOS RF-models?

Elmar Gondro, Oskar Kowarik, Gerhard Knoblinger, Peter Klein

Proceedings of the IEEE 2001 Custom Integrated Circuits Conference, 2001