Gérard Ghibaudo

According to our database, Gérard Ghibaudo authored at least 74 papers between 2000 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K.

F. Serra Di Santa Maria, Francis Balestra, Christoforos G. Theodorou, Gérard Ghibaudo, Cezar B. Zota, Eunjung Cha

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications.

F. Serra Di Santa Maria, Christoforos G. Theodorou, Francis Balestra, Gérard Ghibaudo, Eunjung Cha, Cezar B. Zota

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.

Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2021

"Pinch to Detect": A Method to Increase the Number of Detectable RTN Traps in Nano-scale MOSFETs.

Angeliki Tataridou, Gérard Ghibaudo, Christoforos G. Theodorou

Proceedings of the IEEE International Reliability Physics Symposium, 2021

VERILOR: A Verilog-A Model of Lorentzian Spectra for Simulating Trap-related Noise in CMOS Circuits.

Angeliki Tataridou, Gérard Ghibaudo, Christoforos G. Theodorou

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface.

B. Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, François Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, Cyrille Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs.

Roméo Kom Kammeugne, Charles Leroux, Tadeu Mota Frutuoso, Jacques Cluzel, Laura Vauche, Cyrille Le Royer, Romain Gwoziecki, Xavier Garros, Fred Gaillard, Matthew Charles, Edwige Bano, Gérard Ghibaudo

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2019

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT.

Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, A. Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges.

D. Nouguier, X. Federspiel, Gérard Ghibaudo, M. Rafik, David Roy

Microelectron. Reliab., 2018

Study of forward AC stress degradation of GaN-on-Si Schottky diodes.

Thomas Lorin, William Vandendaele, Romain Gwoziecki, Charlotte Gillot, Jérome Biscarrat, Gérard Ghibaudo, Fred Gaillard

Microelectron. Reliab., 2018

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).

Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs.

Krishna Pradeep, Theano A. Karatsori, Thierry Poiroux, Andre Juge, Patrick Scheer, Gilles Gouget, Emmanuel Josse, Gérard Ghibaudo

Proceedings of the 48th European Solid-State Device Research Conference, 2018

Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator.

Theano A. Karatsori, K. Bennamane, Christoforos G. Theodorou, L. Czornomaz, Jean Fompeyrine, Cezar B. Zota, Clarissa Convertino, Gérard Ghibaudo

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2017

Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology.

Giulio Torrente, Jean Coignus, Alexandre Vernhet, Jean-Luc Ogier, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2017

Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices.

Jessy Micout, Quentin Rafhay, Xavier Garros, Mikaël Cassé, Jean Coignus, Luca Pasini, Cao-Minh Vincent Lu, Nils Rambal, Claire Fenouillet-Béranger, Laurent Brunet, G. Romano, R. Gassilloud, Perrine Batude, Maud Vinet, Gérard Ghibaudo

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators.

Ioannis Messaris, Theano A. Karatsori, Nikolaos Fasarakis, Christoforos G. Theodorou, Spiros Nikolaidis, Gérard Ghibaudo, C. A. Dimitriadis

Microelectron. Reliab., 2016

RAPIDO Testing and Modeling of Assisted Write and Read Operations for SRAMs.

Joseph Nguyen, David Turgis, David Bonciani, Brice Lhomme, Yann Carminati, Olivier Callen, Guillaume Guirleo, Lorenzo Ciampolini, Gérard Ghibaudo

Proceedings of the 25th IEEE North Atlantic Test Workshop, 2016

Noise-induced dynamic variability in nano-scale CMOS SRAM cells.

Christoforos G. Theodorou, Mouenes Fadlallah, Xavier Garros, Charalambos A. Dimitriadis, Gérard Ghibaudo

Proceedings of the 46th European Solid-State Device Research Conference, 2016

Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs.

R. Lavieville, Theano A. Karatsori, Christoforos G. Theodorou, Sylvain Barraud, C. A. Dimitriadis, Gérard Ghibaudo

Proceedings of the 46th European Solid-State Device Research Conference, 2016

Electrical characterization of FDSOI CMOS devices.

Gérard Ghibaudo

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Physically-based extraction methodology for accurate MOSFET degradation assessment.

Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2015

Impact of short-channel effects on velocity overshoot in MOSFET.

Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo

Proceedings of the IEEE 13th International New Circuits and Systems Conference, 2015

On the impact of OxRAM-based synapses variability on convolutional neural networks performance.

Daniele Garbin, Elisa Vianello, Olivier Bichler, M. Azzaz, Quentin Rafhay, Philippe Candelier, Christian Gamrat, Gérard Ghibaudo, Barbara De Salvo, Luca Perniola

Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale Architectures, 2015

New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs.

Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Emmanuel Josse, Charalambos A. Dimitriadis, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements.

Sarra Souiki-Figuigui, Veronique Sousa, Gérard Ghibaudo, Gabriele Navarro, Martin Coué, Luca Perniola, P. Zuliani, Roberto Annunziata

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment.

A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices.

Carlos Suarez-Segovia, Charles Leroux, Florian Domengie, Karen Dabertrand, Vincent Joseph, Giovanni Romano, Pierre Caubet, Stephane Zoll, Olivier Weber, Gérard Ghibaudo, Gilles Reimbold, Michel Haond

Proceedings of the 45th European Solid State Device Research Conference, 2015

Low-frequency noise in bare SOI wafers: Experiments and model.

Luca Pirro, Irina Ionica, Sorin Cristoloveanu, Gérard Ghibaudo

Proceedings of the 45th European Solid State Device Research Conference, 2015

Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR.

Gaspard Hiblot, Quentin Rafhay, Loic Gaben, Gérard Ghibaudo, Frédéric Boeuf

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

Characterization Methodology for MOSFET Local Systematic Variability in Presence of Statistical Variability.

Omar Jonani Franco Piliado, Giancarlo Castaneda, Andre Juge, Gérard Ghibaudo

J. Low Power Electron., 2014

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies.

Frederic Monsieur, Yvan Denis, Denis Rideau, Vincent Quenette, Gilles Gouget, Clément Tavernier, Hervé Jaouen, Gérard Ghibaudo, Joris Lacord

Proceedings of the 44th European Solid State Device Research Conference, 2014

Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs.

Eleftherios G. Ioannidis, Sébastien Haendler, Christoforos G. Theodorou, Nicolas Planes, Charalabos A. Dimitriadis, Gérard Ghibaudo

Proceedings of the 44th European Solid State Device Research Conference, 2014

Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime.

Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo

Proceedings of the 44th European Solid State Device Research Conference, 2014

Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI.

Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, David Turgis, Gérard Ghibaudo

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Multiple-pulse dynamic stability and failure analysis of low-voltage 6T-SRAM bitcells in 28nm UTBB-FDSOI.

Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, Bertrand Pelloux-Prayer, Shishir Kumar, Philippe Flatresse, Christophe Lecocq, Gérard Ghibaudo

Proceedings of the 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 2013

Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs.

Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold

Proceedings of the European Solid-State Device Research Conference, 2013

Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations.

Remi Coquand, Sylvain Barraud, Mikaël Cassé, Masahiro Koyama, Virginie Maffini-Alvaro, Marie-Pierre Samson, Lucie Tosti, Xavier Mescot, Gérard Ghibaudo, Stéphane Monfray, Frédéric Boeuf, Olivier Faynot, Barbara De Salvo

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses.

Laurent Negre, David Roy, Florian Cacho, Patrick Scheer, Sebastien Jan, Samuel Boret, Daniel Gloria, Gérard Ghibaudo

IEEE J. Solid State Circuits, 2012

Analytical modeling of parasitics in monolithically integrated 3D inverters.

Joris Lacord, Perrine Batude, Gérard Ghibaudo, Frédéric Boeuf

Proceedings of the IEEE International Conference on IC Design & Technology, 2012

Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs.

Nikolaos Fasarakis, Andreas Tsormpatzoglou, Dimitrios H. Tassis, Konstantinos Papathanasiou, C. A. Dimitriadis, Gérard Ghibaudo

Proceedings of the 19th IEEE International Conference on Electronics, Circuits and Systems, 2012

Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs.

Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Franck Arnaud, Jalal Jomaah, Charalambos A. Dimitriadis, Gérard Ghibaudo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs.

Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

Static and low frequency noise characterization of densely packed CNT-TFTs.

Min-Kyu Joo, Un Jeong Kim, Dae-Young Jeon, So Jeong Park, Mireille Mouis, Gyu-Tae Kim, Gérard Ghibaudo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

New parameter extraction method based on split C-V for FDSOI MOSFETs.

Imed Ben Akkez, Antoine Cros, Claire Fenouillet-Béranger, Frédéric Boeuf, Quentin Rafhay, Francis Balestra, Gérard Ghibaudo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2010

Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation.

L. Gerrer, M. Rafik, G. Ribes, Gérard Ghibaudo, E. Vincent

Microelectron. Reliab., 2010

2009

Oxide Soft Breakdown : From device modeling to small circuit simulation.

L. Gerrer, Gérard Ghibaudo, G. Ribes

Proceedings of the 35th European Solid-State Circuits Conference, 2009

Challenges and prospects of RF oscillators using silicon resonant tunneling diodes.

Emanuela Buccafurri, Abdelkrim Medjahdi, Françis Calmon, Raphael Clerc, Marco Pala, A. Poncet, Gérard Ghibaudo

Proceedings of the 35th European Solid-State Circuits Conference, 2009

2008

Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride.

Malick Diop, Nathalie Revil, M. Marin, Frederic Monsieur, Pascal Chevalier, Gérard Ghibaudo

Microelectron. Reliab., 2008

Impact of silicon nitride CESL on NLDEMOS transistor reliability.

Gaelle Beylier, Sylvie Bruyère, Darcy Benoit, Gérard Ghibaudo

Microelectron. Reliab., 2008

2007

Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks.

Gilles Reimbold, Jérôme Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, François Martin

Microelectron. Reliab., 2007

Accurate determination of flat band voltage in advanced MOS structure.

Charles Leroux, Gérard Ghibaudo, Gilles Reimbold

Microelectron. Reliab., 2007

Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride.

Gaelle Beylier, Sylvie Bruyère, Darcy Benoit, Gérard Ghibaudo

Microelectron. Reliab., 2007

2005

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown.

G. Ribes, S. Bruyère, Mickael Denais, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2005

Multi-vibrational hydrogen release: Physical origin of T_bd, Q_bd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.

G. Ribes, S. Bruyère, Mickael Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2005

Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors.

Emilie Deloffre, L. Montès, Gérard Ghibaudo, Sylvie Bruyère, Serge Blonkowski, Stéphane Bécu, Mickael Gros-Jean, Sébastien Crémer

Microelectron. Reliab., 2005

On the SILC mechanism in MOSFET's with ultrathin oxides.

D. Bauza, F. Rahmoune, R. Laqli, Gérard Ghibaudo

Microelectron. Reliab., 2005

2003

On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.

Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2003

Charge trapping in SiO2/HfO2/TiN gate stack.

François Lime, Gérard Ghibaudo, B. Guillaumot

Microelectron. Reliab., 2003

Guest Editorial.

Gérard Ghibaudo, E. Vincent

Microelectron. Reliab., 2003

Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices.

M. Fadlallah, C. Petit, A. Meinertzhagen, Gérard Ghibaudo, M. Bidaud, O. Simonetti, F. Guyader

Microelectron. Reliab., 2003

2002

Gate oxide Reliability assessment optimization.

Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2002

Electrical noise and RTS fluctuations in advanced CMOS devices.

Gérard Ghibaudo, T. Boutchacha

Microelectron. Reliab., 2002

Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs.

M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter, G. Guégan

Microelectron. Reliab., 2002

Origin of hot carrier degradation in advanced nMOSFET devices.

B. Cretu, Francis Balestra, Gérard Ghibaudo, G. Guégan

Microelectron. Reliab., 2002

2001

Direct tunnelling models for circuit simulation.

P. O'Sullivan, Raphael Clerc, Kevin G. McCarthy, Alan Mathewson, Gérard Ghibaudo

Microelectron. Reliab., 2001

Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.

Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2001

Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides.

Frederic Monsieur, E. Vincent, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2001

Stress induced leakage current at low field in ultra thin oxides.

François Lime, Gérard Ghibaudo, G. Guégan

Microelectron. Reliab., 2001

Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors.

Sébastien Haendler, Jalal Jomaah, Gérard Ghibaudo, Francis Balestra

Microelectron. Reliab., 2001

Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta₂O₅ as gate dielectrics.

M. Fadlallah, Arkadiusz Szewczyk, C. Giannakopoulos, B. Cretu, Frederic Monsieur, T. Devoivre, Jalal Jomaah, Gérard Ghibaudo

Microelectron. Reliab., 2001

Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm).

Raphael Clerc, Alessandro S. Spinelli, Gérard Ghibaudo, Charles Leroux, G. Pananakakis

Microelectron. Reliab., 2001

Body effect induced wear-out acceleration in ultra-thin oxides.

Sylvie Bruyère, David Roy, E. Robilliart, E. Vincent, Gérard Ghibaudo

Microelectron. Reliab., 2001

Failures in ultrathin oxides: Stored energy or carrier energy driven?

S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo

Microelectron. Reliab., 2001

2000

Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors.

M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter

Proceedings of the 2000 7th IEEE International Conference on Electronics, 2000